A lithographic apparatus configured to project a patterned beam of radiation onto a target portion of a substrate is disclosed. The apparatus includes a first radiation dose detector and a second radiation dose detector, each detector comprising a secondary electron emission surface configured to receive a radiation flux and to emit secondary electrons due to the receipt of the radiation flux, the first radiation dose detector located upstream with respect to the second radiation dose detector viewed with respect to a direction of radiation transmission, and a meter, connected to each detector, to detect a current or voltage resulting from the secondary electron emission from the respective electron emission surface.

Lithographic apparatus, and device manufacturing method

An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.

Method and apparatus for angular-resolved spectroscopic lithography characterization

A method for determining overlay between a first grating (110) and a second grating (120) on a substrate (100), the second grating (120) on top of the first grating(110), the second grating (120) having substantially identical pitch (P1) as the first grating (110), the second and first gratings forming a composite grating (110,120), the method including providing a first illumination beam (IB) for illuminating the composite grating (110,120) under an angle of incidence (β) along a first horizontal direction (D1) along the surface of the substrate, and measuring a first intensity (i+) of a first order diffracted beam (B+) from the composite grating (110,120); providing a second illumination beam for illuminating the composite grating (11θ!i2O) under the angle of incidence (-β) along a second horizontal direction (D2) along the surface of the substrate, wherein the second horizontal direction (D2) is opposite to the first horizontal direction (DI)1 and measuring a second intensity (i-) of a minus first order diffracted beam (B-) from the composite grating (110,120).

Diffraction Based Overlay Metrology Tool and Method

Disclosed is a method for determining an overlay error between at least two layers in a multiple layer sample. An imaging optical system is used to measure a plurality of measured optical signals from a plurality of periodic targets on the sample. The targets each have a first structure in a first layer and a second structure in a second layer. There are predefined offsets between the first and second structures. A scatterometry overlay technique is then used to analyze the measured optical signals of the periodic targets and the predefined offsets of the first and second structures of the periodic targets to thereby determine an overlay error between the first and second structures of the periodic targets.

Apparatus and methods for detecting overlay errors using scatterometry

A metrology apparatus is arranged to illuminate a plurality of targets with an off-axis illumination mode. Images of the targets are obtained using only one first order diffracted beam. Where the target is a composite grating, overlay measurements can be obtained from the intensities of the images of the different gratings. Overlay measurements can be corrected for errors caused by variations in the position of the gratings in an image field.

Metrology method and apparatus, lithographic system, device manufacturing method and substrate.

An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized light and their relative phase difference.

Method and apparatus for angular-resolved spectroscopic lithography characterisation

For angular resolved spectrometry a radiation beam is used having an illumination profile having four quadrants is used. The first and third quadrants are illuminated whereas the second and fourth quadrants aren't illuminated. The resulting pupil plane is thus also divided into four quadrants with only the zeroth order diffraction pattern appearing in the first and third quadrants and only the first order diffraction pattern appearing in the second and third quadrants.

Inspection Apparatus, Lithographic Apparatus, Lithographic Processing Cell and Inspection Method

A method according to an embodiment includes obtaining calibration measurement data, with an optical detection apparatus, from a plurality of marker structure sets provided on a calibration substrate. Each marker structure set includes at least one calibration marker structure created using different known values of the process parameter. The method includes obtaining measurement data, with the optical detection apparatus, from at least one marker structure provided on a substrate and exposed using an unknown value of the process parameter; and determining the unknown value of the process parameter from the obtained measurement data by employing regression coefficients in a model based on the known values of the process parameter and the calibration measurement data.

Method to determine the value of process parameters based on scatterometry data

In a method according to one embodiment of the invention, aberrations in a lithographic apparatus are detected by printing a test pattern having at least one degree of symmetry and being sensitive to a particular aberration in the apparatus, and using a scatterometer to derive information concerning the aberration. The test structure may comprise a two-bar grating, in which case the inner and outer duty ratios can be reconstructed to derive information indicative of comatic aberration. Alternatively, a hexagonal array of dots can be used, such that scatterometry data can be used to reconstruct dot diameters indicative of 3-wave aberration.

Antoine Gaston Marie Kiers

Papers

Method and apparatus for angular-resolved spectroscopic lithography characterization

Method and apparatus for angular-resolved spectroscopic lithography characterisation

Inspection Apparatus, Lithographic Apparatus, Lithographic Processing Cell and Inspection Method

Method to determine the value of process parameters based on scatterometry data

Test pattern, inspection method, and device manufacturing method