A
Arathy Varghese
Researcher at Malaviya National Institute of Technology, Jaipur
Publications - 31
Citations - 215
Arathy Varghese is an academic researcher from Malaviya National Institute of Technology, Jaipur. The author has contributed to research in topics: High-electron-mobility transistor & Transconductance. The author has an hindex of 6, co-authored 25 publications receiving 87 citations. Previous affiliations of Arathy Varghese include Cardiff University & Indian Institute of Technology Bombay.
Papers
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Journal ArticleDOI
Analytical Modeling and Simulation-Based Investigation of AlGaN/AlN/GaN Bio-HEMT Sensor for C-erbB-2 Detection
TL;DR: In this paper, a mathematical model developed for high frequency AlGaN/AlN/GaN HEMT with focus on its sensing performance has been presented and the model developed has been compared and verified with simulation using Silvaco ATLAS TCAD.
Journal ArticleDOI
Enhancement of Johnson figure of merit in III‐V HEMT combined with discrete field plate and AlGaN blocking layer
Journal ArticleDOI
Fabrication and Charge Deduction Based Sensitivity Analysis of GaN MOS-HEMT Device for Glucose, MIG, C-erbB-2, KIM-1, and PSA Detection
TL;DR: In this article, the applicability of a high-resolution AlGaN/AlN/GaN metal oxide semiconductor-high electron mobility transistor (MOS-HEMT) for multiple bio detection and analysis of its sensitivity through a charge deduction based approach is presented.
Proceedings ArticleDOI
A Novel Time-Domain based Feature for EMG-PR Prosthetic and Rehabilitation Application
TL;DR: A novel feature defined as PAP (peak average power) has been proposed and has been validated for NinaPro database which includes isometric, isotonic, grasp and finger force based upper limb motions and the comparison of classification accuracy has been performed with well-known time domain based features.
Journal ArticleDOI
Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications
P. Murugapandiyan,A. Mohanbabu,V. Rajya Lakshmi,V. N. Ramakrishnan,Arathy Varghese,Mohd Wasim,S. Baskaran,R. Saravana Kumar,V. Janakiraman +8 more
TL;DR: In this paper, a performance enhancement evaluation of n−−−doped graded InGaN drain/source region-based HfO2/InAlN/Aln/Al N/GaN/al N/AlN on SiC metal-oxide-semiconductor high electron mobility transistor (MOS-HEMTs) with a T-shaped gate is presented.