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Ashok Kumar

Researcher at Council of Scientific and Industrial Research

Publications -  173
Citations -  4289

Ashok Kumar is an academic researcher from Council of Scientific and Industrial Research. The author has contributed to research in topics: Ferroelectricity & Dielectric. The author has an hindex of 31, co-authored 173 publications receiving 3534 citations. Previous affiliations of Ashok Kumar include National Physical Laboratory & University of Puerto Rico, Río Piedras.

Papers
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Past, present and future of blood pressure measuring instruments and their calibration

Rahul Kumar, +9 more
- 01 Feb 2021 - 
TL;DR: A terse review of different types of BP measuring techniques and devices, commercially available is presented along with some related important historical developments to standardise a uniform and acceptable calibration method for these devices which is need of the hour.
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Studies of ferroelectric properties and leakage current behaviour of microwave sintered ferroelectric Na0.5Bi0.5TiO3 ceramic

Hari Sankar Mohanty, +8 more
- 28 Nov 2017 - 
TL;DR: In this paper, a single phase lead-free ferroelectric ceramic Na0.5Bi 0.5TiO3 (NBT) is synthesized using sol-gel method and sintered using microwave sintering technique.
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Phase transition and temperature stability of piezoelectric properties in Mn-modified Pb(Mg1/3Nb2/3)O3-PbZrO3-PbTiO3 ceramics

Yongke Yan, +5 more
- 12 Apr 2012 - 
TL;DR: In this paper, the effect of two different Mn modifiers (MnO2 and PMnN) on phase transition in Pb(Mg1/3Nb2/3)O3-PbZrO3 -PbTiO3 ceramics was investigated.
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Probing the ferroelectric phase transition in sol-gel-derived polycrystalline bismuth ferrite thin films

Ashok Kumar, +2 more
- 01 Sep 2008 - 
TL;DR: In this article, polycrystalline BiFeO3 (BFO) thin films were successfully grown on Pt/Ti/SiO2/Si(100) and SrTiO3(STO) (100) substrates using the chemical solution deposition (CSD) technique.
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Ferroelectric-carbon nanotube memory devices.

Ashok Kumar, +11 more
- 27 Apr 2012 - 
TL;DR: Coating of a registered array of aligned multi-wall carbon nanotubes grown on silicon substrates by functional ferroelectric Pb(Zr,Ti)O3 (PZT) which produces structures suitable for commercial prototype memories and confirms the switchability of the device.