A
Ashraful G. Bhuiyan
Researcher at Khulna University of Engineering & Technology
Publications - 68
Citations - 1573
Ashraful G. Bhuiyan is an academic researcher from Khulna University of Engineering & Technology. The author has contributed to research in topics: Graphene & Epitaxy. The author has an hindex of 12, co-authored 67 publications receiving 1435 citations. Previous affiliations of Ashraful G. Bhuiyan include University of Fukui.
Papers
More filters
Journal ArticleDOI
Indium nitride (InN): A review on growth, characterization, and properties
TL;DR: In this paper, the authors reviewed the development of indium nitride (InN) semiconductors from its evolution to the present day and discussed the most popular growth techniques, metalorganic vapor phase epitaxy and molecular beam epitaxy.
Journal ArticleDOI
InGaN Solar Cells: Present State of the Art and Important Challenges
TL;DR: A review on the present state of the art of In-based solar cells is presented and the most important challenges toward the high-efficiency N materials are discussed in the context of the recent results.
Journal ArticleDOI
Single-crystalline InN films with an absorption edge between 0.7 and 2 eV grown using different techniques and evidence of the actual band gap energy
TL;DR: In this article, an analysis of single crystalline InN films with an absorption edge between 0.7 and 2 eV have been grown using a variety of different techniques, including conventional metal-organic vapor phase epitaxy, ArF-laser assisted MOVPE (la-MOVPE), and plasma-assisted molecular-beam epitaxy (pa-MBE).
Journal ArticleDOI
Anomalous temperature dependent thermal conductivity of two-dimensional silicon carbide.
A. S. M. Jannatul Islam,Sherajul Islam,Naim Ferdous,Jeongwon Park,Jeongwon Park,Ashraful G. Bhuiyan,Akihiro Hashimoto +6 more
TL;DR: The thermal properties of two-dimensional silicon carbide are explored using reverse non-equilibrium molecular dynamics simulation to provide a means for better understating as well as designing the efficient thermal management of 2D-SiC based electronics and optoelectronics in near future.