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Atsushi Hiraiwa
Researcher at Waseda University
Publications - 129
Citations - 2671
Atsushi Hiraiwa is an academic researcher from Waseda University. The author has contributed to research in topics: Diamond & Layer (electronics). The author has an hindex of 25, co-authored 123 publications receiving 2348 citations. Previous affiliations of Atsushi Hiraiwa include Hitachi & Nagoya University.
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Patent
Ultrasonic irradiation apparatus and processing apparatus based thereon
Shin-ichiro Umemura,Kenichi Kawabata,Kenko Hitachi Hatoyama Hausu Uchida,Kenji Yasuda,Yasuo Wada,Atsushi Hiraiwa +5 more
TL;DR: In this paper, an ultrasonic irradiation apparatus for generating acoustic cavitation efficiently was proposed, which was intended to realize the action of cavitation on a living body suitable for medical treatment of malignant tumors and treatment of thrombi and calculi.
Journal ArticleDOI
C-H surface diamond field effect transistors for high temperature (400 °C) and high voltage (500 V) operation
Hiroshi Kawarada,Hidetoshi Tsuboi,T. Naruo,Tetsuya Yamada,D. Xu,A. Daicho,Toshio Saito,Atsushi Hiraiwa +7 more
TL;DR: In this article, a highly stable Al2O3 gate oxide on a C-H bonded channel of diamond, high-temperature, and highvoltage metal-oxide-semiconductor field effect transistor (MOSFET) has been realized.
Journal ArticleDOI
Normally-Off C–H Diamond MOSFETs With Partial C–O Channel Achieving 2-kV Breakdown Voltage
Yuya Kitabayashi,Takuya Kudo,Hidetoshi Tsuboi,Tetsuya Yamada,D. Xu,Masanobu Shibata,Daisuke Matsumura,Yuya Hayashi,Mohd Syamsul,Masafumi Inaba,Atsushi Hiraiwa,Hiroshi Kawarada +11 more
TL;DR: In this article, a partially oxidized (partial C-O) channel was used for hydrogen-terminated (C-H) diamond MOSFETs with a high breakdown voltage of over 2 kV at room temperature and normally-off characteristics with a gate threshold voltage of −2.5 −−4 V.
Patent
Semiconductor integrated circuit device having switching misfet and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring
Jun Murata,Yoshitaka Tadaki,Isamu Asano,Mitsuaki Horiuchi,Jun Sugiura,Hiroko Kaneko,Shinji Shimizu,Atsushi Hiraiwa,Hidetsugu Ogishi,Masakazu Sagawa,Masami Ozawa,Sekiguchi Toshihiro +11 more
TL;DR: In this paper, a method of manufacturing a semiconductor integrated circuit device having a switching MISFET and a capacitor element formed over a DRAM substrate, such as a NAND, is disclosed.
Patent
Method for growing silicon-including film by employing plasma deposition
Keizo Suzuki,Atsushi Hiraiwa,Shigeru Takahashi,Shigeru Nishimatsu,Ken Ninomiya,Sadayuki Okudaira +5 more
TL;DR: In this paper, a method for growing a silicon-including film is described, in which the above film is grown on a surface of a substrate by using, as a discharge gas, a halogenide silicon gas or a gas mixture containing a hydrogen sulfide-silicon gas in a plasma deposition apparatus including a vacuum chamber.