다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

http://experimentationlab.berkeley.edu/sites/default/files/AFMImages/butt_AFM.pdf

Force measurements with the atomic force microscope: Technique, interpretation and applications

The demand for compact ultraviolet laser devices is increasing, as they are essential in applications such as optical storage, photocatalysis, sterilization, ophthalmic surgery and nanosurgery. Many researchers are devoting considerable effort to finding materials with larger bandgaps than that of GaN. Here we show that hexagonal boron nitride (hBN) is a promising material for such laser devices because it has a direct bandgap in the ultraviolet region. We obtained a pure hBN single crystal under high-pressure and high-temperature conditions, which shows a dominant luminescence peak and a series of s-like exciton absorption bands around 215 nm, proving it to be a direct-bandgap material. Evidence for room-temperature ultraviolet lasing at 215 nm by accelerated electron excitation is provided by the enhancement and narrowing of the longitudinal mode, threshold behaviour of the excitation current dependence of the emission intensity, and a far-field pattern of the transverse mode.

Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal.

Wide-band-gap oxides such as SrTiO3 are shown to be critical tests of theories of Schottky barrier heights based on metal-induced gap states and charge neutrality levels. This theory is reviewed and used to calculate the Schottky barrier heights and band offsets for many important high dielectric constant oxides on Pt and Si. Good agreement with experiment is found for barrier heights. The band offsets for electrons on Si are found to be small for many key oxides such as SrTiO3 and Ta2O5 which limit their utility as gate oxides in future silicon field effect transistors. The calculations are extended to screen other proposed oxides such as BaZrO3. ZrO2, HfO2, La2O3, Y2O3, HfSiO4, and ZrSiO4. Predictions are also given for barrier heights of the ferroelectric oxides Pb1−xZrxTiO3 and SrBi2Ta2O9 which are used in nonvolatile memories.

Band offsets of wide-band-gap oxides and implications for future electronic devices

Shape-engineerable and highly densely packed single-walled carbon nanotubes and their application as super-capacitor electrodes

/pdf/shape-engineerable-and-highly-densely-packed-single-walled-slt8pdoyvz.pdf

Hydrogen-terminated diamond surfaces and interfaces

We report unambiguous evidence for superconductivity in a heavily boron-doped diamond thin film grown by microwave plasma-assisted chemical vapor deposition (MPCVD). An advantage of the MPCVD-deposited diamond is that it can contain boron at high concentration, especially in (111)-oriented films. Superconducting transition temperatures are determined by transport measurements to be 7.4 K for TC onset and 4.2 K for zero resistance. The upper critical field is estimated to be 7 T. Magnetization as a function of magnetic fields shows typical type-II superconducting properties.

Superconductivity in diamond thin films well above liquid helium temperature

Diamond has always been adored as a jewel. Even more fascinating is its outstanding physical properties; it is the hardest material known in the world with the highest thermal conductivity. Meanwhile, when we turn to its electrical properties, diamond is a rather featureless electrical insulator. However, with boron doping, it becomes a p-type semiconductor, with boron acting as a charge acceptor. Therefore the recent news of superconductivity in heavily boron-doped diamond synthesized by high pressure sintering was received with considerable surprise. Opening up new possibilities for diamond-based electrical devices, a systematic investigation of these phenomena clearly needs to be achieved. Here we show unambiguous evidence of superconductivity in a diamond thin film deposited by a chemical vapor deposition (CVD) method. Furthermore the onset of the superconducting transition is found to be 7.4K, which is higher than the reported value in ref(7) and well above helium liquid temperature. This finding establishes the superconductivity to be a universal property of boron-doped diamond, demonstrating that device application is indeed a feasible challenge.

Superconductivity in CVD Diamond Thin Film Well-Above Liquid Helium Temperature

The recent discovery that heavily boron-doped diamond is a superconductor with a transition temperature of 7.4 K raises the prospect of superconducting devices with the unique properties of diamond. A study of the electronic structure responsible for superconductivity in heavily boron-doped diamond supports the idea that superconductivity is phonon-mediated, and provides information on the electronic structure that must be retained in order to harness this effect in practical devices. The physical properties of lightly doped semiconductors are well described by electronic band-structure calculations and impurity energy levels1. Such properties form the basis of present-day semiconductor technology. If the doping concentration n exceeds a critical value nc, the system passes through an insulator-to-metal transition and exhibits metallic behaviour; this is widely accepted to occur as a consequence of the impurity levels merging to form energy bands2. However, the electronic structure of semiconductors doped beyond nc have not been explored in detail. Therefore, the recent observation of superconductivity emerging near the insulator-to-metal transition3 in heavily boron-doped diamond4,5 has stimulated a discussion on the fundamental origin of the metallic states responsible for the superconductivity. Two approaches have been adopted for describing this metallic state: the introduction of charge carriers into either the impurity bands6 or the intrinsic diamond bands7,8,9. Here we show experimentally that the doping-dependent occupied electronic structures are consistent with the diamond bands, indicating that holes in the diamond bands play an essential part in determining the metallic nature of the heavily boron-doped diamond superconductor. This supports the diamond band approach and related predictions, including the possibility of achieving dopant-induced superconductivity in silicon and germanium7. It should also provide a foundation for the possible development of diamond-based devices10.

Origin of the metallic properties of heavily boron-doped superconducting diamond

Half-centimeter-high mats of vertically aligned single-walled carbon nanotubes were grown at 600 °C by point-arc microwave plasma chemical vapor deposition. The mats were produced from 0.5 nm of an Fe catalyst layer, thus showing one of the highest catalytic yields of ∼105 times. The growth process shows a lack of poisoning of the catalyst, in contrast to other reports. The experimental results confirm that the growth rate is ultimately limited by the gas phase diffusion of hydrocarbon radicals.

Hiroshi Kawarada

Papers

Hydrogen-terminated diamond surfaces and interfaces

Superconductivity in diamond thin films well above liquid helium temperature

Superconductivity in CVD Diamond Thin Film Well-Above Liquid Helium Temperature

Origin of the metallic properties of heavily boron-doped superconducting diamond

Growth Kinetics of 0.5 cm Vertically Aligned Single-Walled Carbon Nanotubes