Amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) invented only one decade ago are now being commercialized for active-matrix liquid crystal display (AMLCD) backplane applications. They also appear to be well positioned for other flat-panel display applications such as active-matrix organic light-emitting diode (AMOLED) applications, electrophoretic displays, and transparent displays. The objectives of this contribution are to overview AOS materials design; assess indium gallium zinc oxide (IGZO) TFTs for AMLCD and AMOLED applications; identify several technical topics meriting future scrutiny before they can be confidently relied upon as providing a solid scientific foundation for underpinning AOS TFT technology; and briefly speculate on the future of AOS TFTs for display and non-display applications.

An amorphous oxide semiconductor thin-film transistor route to oxide electronics

In this work, we report on the band offsets of yttrium oxide (Y2O3) on various relaxed and strained semiconductor substrates, such as silicon (Si), germanium (Ge), and silicon germanium (SiGe). By using the example of Y2O3/Si, important experimental aspects in using photoemission to determine band offsets are discussed. We then discuss the various values of band offsets of Y2O3 on the different substrates that we obtained by using x-ray photoelectron spectroscopy. Finally, we show that presputtering 3 A of metallic Y [equivalent to 1 ML (monolayer) coverage] before the deposition of Y2O3 affects the band lineup by reducing the resultant valence band offsets. We explain the observed band offsets by using an interfacial layer model.

Band alignment of yttrium oxide on various relaxed and strained semiconductor substrates

The nitridation of Si(100) by ammonia and the subsequent oxidation of the nitrided surface by both gaseous atomic and molecular oxygen was investigated under ultrahigh vacuum (UHV) conditions using X-ray photoelectron spectroscopy (XPS). Nitridation of Si(100) by the thermal decomposition of NH 3 results in the formation of a subsurface nitride and a decrease in the concentration of surface dangling bond sites. On the basis of changes in the N1s spectra obtained after NH 3 adsorption and decomposition, we estimate that the nitride resides about four to five layers below the vacuum- solid interface and that the concentration of surface dangling bonds after nitridation is only 59% of its value on Si(100)-(2 x 1). Oxidation of the nitrided surface is found to produce an oxide phase that remains in the outer layers of the solid and interacts only weakly with the underlying nitride for oxygen coverages up to 2.5 ML. Slight changes in the N1s spectra observed after oxidizing at 300 K are suggested to arise primarily from the introduction of strain within the nitride, and by the formation of a small amount of Si 2 =N-O species near the nitride-oxide interface. The nitrogen bonding environment changes negligibly after oxidizing at 800 K, which is indicative of greater phase separation at elevated surface temperature. Nitridation is also found to significantly reduce the reactivity of the Si(100) surface toward both atomic and molecular oxygen. A comparison of the oxygen uptake on the clean and nitrided surfaces shows quantitatively that the decrease in dangling bond concentration is responsible for the reduced activity of the nitrided surface toward oxidation, and therefore that dangling bonds are the initial adsorption site for both gaseous oxygen atoms and molecules. Increasing the surface temperature is found to promote the uptake of oxygen when O 2 is used as the oxidant, but brings about only a small enhancement in the uptake of gaseous O-atoms. The different effects of surface temperature on the uptake of O versus O 2 are interpreted in terms of the efficiency at which dangling bond pairs are regenerated on the surface at elevated temperature and the different site requirements for the adsorption of O and O 2 .

Oxidation of nitrided si(100) by gaseous atomic and molecular oxygen.

We have investigated chemical states and band offsets in SiN∕Si by photoemission spectroscopy and x-ray absorption spectroscopy. N1s photoemission spectra in SiN for three kinds of layer-thickness films are fitted by a single component, suggesting that a nitrogen atom is surrounded by three silicon and nine nitrogen atoms for the first and the second nearest neighbor, respectively. Valence-band offsets between SiN and the Si substrates are determined to be 1.6 eV using valence-band spectra by subtracting the contribution from Si substrates. Band gap of SiN is estimated to be 5.6–5.7 eV from valence-band, N1s core level, and NK-edge-absorption spectra. Furthermore, time-dependent measurements of N1s photoemission spectra reveal that the x-ray irradiation time is a significant factor to determine the precise valence-band offsets excluding the differential charging effects.

Precise determination of band offsets and chemical states in SiN∕Si studied by photoemission spectroscopy and x-ray absorption spectroscopy

https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=905445

Atushi Suyama

Papers

Electronic structure and energy band offsets for ultrathin silicon nitride on Si(1 0 0)