Aurélien Maréchal

TL;DR: In this article, the capacitance voltage measurements demonstrate that accumulation, depletion, and deep depletion regimes can be controlled by the bias voltage, opening the route for diamond metal-oxide-semiconductor field effect transistor.

TL;DR: In this paper, the interfacial energy band diagram configuration of the Al2O3/O-diamond was established based on X-ray photoelectron spectroscopy.

TL;DR: In this paper, a complete model for the metal-oxide-semiconductor capacitors, leakage current mechanisms through the oxide into the semiconductor and small a.c. signal equivalent circuit of the device is proposed and discussed.

TL;DR: In this article, the authors used Silvaco to model a diamond p-n junction and studied the carrier densities responsible for the electrical characteristics of the devices, which can be used to predict the architecture and behavior of future devices, such as bipolar junction transistor and metal-oxide-semiconductor field effect transistor.

TL;DR: In this paper, the electrical properties of metal-semiconductor (M/SC) and metal/oxide/SC structures built with Zr or ZrO2 deposited on oxygen-terminated surfaces of (001)-oriented diamond films, comprised of a stack of lightly p-doped diamond on a heavily doped layer itself homoepitaxially grown on an Ib substrate, are investigated experimentally and compared to different models.