An overview is presented of the current state-of-the-art in silicon nanophotonic ring resonators. Basic theory of ring resonators is discussed, and applied to the peculiarities of submicron silicon photonic wire waveguides: the small dimensions and tight bend radii, sensitivity to perturbations and the boundary conditions of the fabrication processes. Theory is compared to quantitative measurements. Finally, several of the more promising applications of silicon ring resonators are discussed: filters and optical delay lines, label-free biosensors, and active rings for efficient modulators and even light sources.

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Silicon microring resonators

Part I. Silicon Photonics - Introduction: 1. Fabless Silicon Photonics: 1.1 Introduction 1.2 Silicon photonics - the next fabless semiconductor industry 1.3 Applications 1.4 Technical challenges and the state of the art 1.5 Opportunities 2. Modelling and Design Approaches: 2.1 Optical Waveguide Mode Solver 2.2 Wave Propagation 2.3 Optoelectronic models 2.4 Microwave Modelling 2.5 Thermal Modelling 2.6 Photonic Circuit Modelling 2.7 Physical Layout 2.8 Software Tools Integration Part II. Silicon Photonics - Passive Components: 3. Optical Materials and Waveguides: 3.1 Silicon-on-Insulator 3.2 Waveguides 3.3 Bent waveguides 3.4 Code Listings 3.5 Problems 4. Fundamental Building Blocks: 4.1 Directional couplers 4.2 Y-Branch 4.3 Mach-Zehnder Interferometer 4.4 Ring resonators 4.5 Waveguide Bragg Grating Filters 4.6 Code Listings 4.7 Problems 5. Optical I/O: 5.1 The challenge of optical coupling to silicon photonic chips 5.2 Grating Coupler 5.3 Edge Coupler 5.4 Polarization 5.5 Code Listings 5.6 Problems Part III. Silicon Photonics - Active Components: 6. Modulators: 6.1 Plasma Dispersion E 6.2 PN Junction Phase Shifter 6.3 Micro-ring Modulators 6.4 Forward-biased PIN Junction 6.5 Active Tuning 6.6 Thermo-Optic Switch 6.7 Code Listings 6.8 Problems 7. Detectors: 7.1 Performance Parameters 7.2 Fabrication 7.3 Types of detectors 7.4 Design Considerations 7.5 Detector modelling 7.5.2 Electronic Simulations 7.6 Code Listings 7.7 Problems 8. Lasers: 8.1 External Lasers 8.2 Laser Modelling 8.3 Co-Packaging 8.4 Hybrid Silicon Lasers 8.5 Monolithic Lasers 8.6 Alternative Light Sources 8.7 Problems Part IV. Silicon Photonics - System Design: 9. Photonic Circuit Modelling: 9.1 Need for photonic circuit modelling 9.2 Components for System Design 9.3 Compact Models 9.4 Directional Coupler - Compact Model 9.5 Ring Modulator - Circuit Model 9.6 Grating Coupler - S Parameters 9.7 Code Listings 10. Tools and Techniques: 10.1 Process Design Kit (PDK) 10.2 Mask Layout 11. Fabrication: 11.1 Fabrication Non-Uniformity 11.2 Problems 12. Testing and Packaging: 12.1 Electrical and Optical Interfacing 12.2 Automated Optical Probe Stations 12.3 Design for Test 13. Silicon Photonic System Example: 13.1 Wavelength Division Multiplexed Transmitter.

Silicon Photonics Design: From Devices to Systems

This paper proposes a novel synchronous rectifier (SR) driving scheme for resonant converters. It is very suitable for high-frequency, high-efficiency, and high-power-density dc-dc resonant converters with SRs. In this paper, an LLC resonant converter with the proposed synchronous rectification is designed and analyzed. With the proposed driving scheme, the SR body diode conduction is reduced to almost zero. The driving scheme eliminates the reverse-recovery problem of SRs. Both current and voltage stresses are greatly decreased, and the conduction loss and switching loss of SRs are also reduced considerably. The experimental results show that the proposed LLC resonant converter with SRs can achieve low stress, high efficiency, and high power density.

A Novel Driving Scheme for Synchronous Rectifiers in LLC Resonant Converters

Wide-bandgap semiconductors are expected to be applied to solid-state lighting and power devices, supporting a future energy-saving society. While GaN-based white LEDs have rapidly become widespread in the lighting industry, SiC- and GaN-based power devices have not yet achieved their popular use, like GaN-based white LEDs for lighting, despite having reached the practical phase. What are the issues to be addressed for such power devices? In addition, other wide-bandgap semiconductors such as diamond and oxides are attracting focusing interest due to their promising functions especially for power-device applications. There, however, should be many unknown phenomena and problems in their defect, surface, and interface properties, which must be addressed to fully exploit their functions. In this review, issues of wide-bandgap semiconductors to be addressed in their basic properties are examined toward their ?full bloom?.

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[Award for Best Review Paper Speech](30min.)Wide-Bandgap Semiconductor Materials: For Their Full Bloom

Silicon-Carbide (SiC) devices with superior performance over traditional silicon power devices have become the prime candidates for future high-performance power electronics energy conversion. Traditional device packaging becomes a limiting factor in fully realizing the benefits offered by SiC power devices, and thus, improved and advanced packaging structures are required to bridge the gap between SiC devices and their applications. This paper provides a review of the state-of-art advanced module packaging technologies for SiC devices with the focuses on module layout, packaging material system, and module integration trend, and links these packaging advancements to their impacts on the SiC device performances. Through this review, the paper discusses main challenges and potential solutions for SiC modules, which is critical for future SiC applications.

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A review of SiC power module packaging: Layout, material system and integration

Diamond power devices: state of the art, modelling, figures of merit and future perspective

Silicon-on-insulator racetrack resonators can be used as multiplexers in wavelength division multiplexing applications The free spectral range should be comparable to the span of the C-band so that a maximum number of channels can be multiplexed However, the free spectral range is inversely proportional to the length of the resonator and, therefore, bending losses can become non-negligible A viable alternative to increase the free spectral range is to use the Vernier effect In this work, we present the theory of series-coupled racetrack resonators exhibiting the Vernier effect We demonstrate the experimental performance of the device using silicon-on-insulator strip waveguides The extended free spectral range is 36 nm and the interstitial peak suppression is from 9 dB to 17 dB

Series-coupled silicon racetrack resonators and the Vernier effect: theory and measurement

This paper presents a detailed analysis of racetrack resonators on silicon on insulator substrates. Both the temperature effects and the particularities of silicon nanophotonics are considered throughout the approach. This paper provides a detailed description of the numerical modeling and its application to different designs, while providing several charts and fitting equations. The results presented in this paper can be applied to three major applications: Thermo-optical tuning of optical resonators, thermo-optical modulator and wide range/high sensitivity temperature sensors. While quantifying the temperature effects, this paper also provides useful answers on how critical the temperature parameter is in the optical cavity behaviour.

Temperature Effects on Silicon-on-Insulator (SOI) Racetrack Resonators: A Coupled Analytic and 2-D Finite Difference Approach

The paper presents a simple and cost effective solution to supply high side power electronic switch gate drivers. The solution can be integrated and it is demonstrated that it can be loss free, depending on how the power switch is driven. The solution is based on a pulsed linear regulator, only sensitive to a positive dv/dt. At every main power switch's turn OFF, it recycles the switching losses in order to recharge a storage capacitor. The paper presents the global operation and focuses on interesting and important operating characteristics thanks to simulation and practical results.

Loss Free Gate Driver Unipolar Power Supply for High Side Power Transistors

A p-type deep-depletion mode monocrystalline diamond MOSFET is demonstrated, with a 190-nm-thick controllable channel. Such a device offers new opportunities for a better optimization of the bulk doping versus designed breakdown voltage and the resulting figure of merit. Diamond MOSFETs with Boron doping of ${1.75}\times {10}^{{17}} ~\text {cm}^{-{3}}$ and using 20-nm ALD deposited Al2O3 as the gate oxide show promising IV characteristics, with a clear ON and OFF state operation. The MOSFETs have a normally-ON operation with typical threshold voltages of ${V}_{\text {TH}}=+7$ V and a ON-state drain current of ${I}_{\text {SD}}=1.9~\mu \text{A}$ /mm at ${V}_{\text {SD}}=10$ V and ${V}_{\text {GS}}=-5$ V, at room temperature. A high hole mobility (1000±200 cm2/( $\text {V}\cdot \text {s}$ )) has been evaluated. Just before the experimental voltage breakdown at 200 V, the gate leakage is still below 0.6 nA/mm at room temperature and the peak electric field in diamond at the gate edge is simulated at 4 MV/cm. Beyond this experimental proof of concept, these combined values show the high potential of deep-depletion mode Boron doped diamond MOSFETs.

Nicolas Rouger

Papers

Diamond power devices: state of the art, modelling, figures of merit and future perspective

Series-coupled silicon racetrack resonators and the Vernier effect: theory and measurement

Temperature Effects on Silicon-on-Insulator (SOI) Racetrack Resonators: A Coupled Analytic and 2-D Finite Difference Approach

Loss Free Gate Driver Unipolar Power Supply for High Side Power Transistors

Deep-Depletion Mode Boron-Doped Monocrystalline Diamond Metal Oxide Semiconductor Field Effect Transistor