The CMOS technology area has quickly grown, calling for a new text--and here it is, covering the analysis and design of CMOS integrated circuits that practicing engineers need to master to succeed. Filled with many examples and chapter-ending problems, the book not only describes the thought process behind each circuit topology, but also considers the rationale behind each modification. The analysis and design techniques focus on CMOS circuits but also apply to other IC technologies.
Table of contents

1 Introduction to Analog Design
2 Basic MOS Device Physics
3 Single-Stage Amplifiers
4 Differential Amplifiers
5 Passive and Active Current Mirrors
6 Frequency Response of Amplifiers
7 Noise
8 Feedback
9 Operational Amplifiers
10 Stability and Frequency Compensation
11 Bandgap References
12 Introduction to Switched-Capacitor Circuits
13 Nonlinearity and Mismatch
14 Oscillators
15 Phase-Locked Loops
16 Short-Channel Effects and Device Models
17 CMOS Processing Technology
18 Layout and Packaging

/pdf/design-of-analog-cmos-integrated-circuits-35wxhwa3a6.pdf

Design of Analog CMOS Integrated Circuits

A sub-1-V CMOS bandgap voltage reference requiring no low threshold voltage device is introduced in this paper. In a CMOS technology with V/sub thn/ /spl ap/ |V/sub thp/| /spl ap/ 0.9 V at 0/spl deg/C, the minimum supply voltage of the proposed voltage reference is 0.98 V, and the maximum supply current is 18 /spl mu/A. A temperature coefficient of 15 ppm//spl deg/C from 0/spl deg/C to 100/spl deg/C is recorded after trimming. The active area of the circuit is about 0.24 mm/sup 2/.

A sub-1-V 15-ppm//spl deg/C CMOS bandgap voltage reference without requiring low threshold voltage device

A low-power CMOS voltage reference was developed using a 0.35 mum standard CMOS process technology. The device consists of MOSFET circuits operated in the subthreshold region and uses no resistors. It generates two voltages having opposite temperature coefficients and adds them to produce an output voltage with a near-zero temperature coefficient. The resulting voltage is equal to the extrapolated threshold voltage of a MOSFET at absolute zero temperature, which was about 745 mV for the MOSFETs we used. The temperature coefficient of the voltage was 7 ppm/degC at best and 15 ppm/degC on average, in a range from - 20 to 80degC. The line sensitivity was 20 ppm/V in a supply voltage range of 1.4-3 V, and the power supply rejection ratio (PSRR) was -45 dB at 100 Hz. The power dissipation was 0.3 muW at 80degC. The chip area was 0.05 mm2 . Our device would be suitable for use in subthreshold-operated, power-aware LSIs.

/pdf/a-300-nw-15-ppm-circ-c-20-ppm-v-cmos-voltage-reference-5c6xnvq0l1.pdf

A 300 nW, 15 ppm/ $^{\circ}$ C, 20 ppm/V CMOS Voltage Reference Circuit Consisting of Subthreshold MOSFETs

The electronics of a general biomedical device consist of energy delivery, analog-to-digital conversion, signal processing, and communication subsystems. Each of these blocks must be designed for minimum energy consumption. Specific design techniques, such as aggressive voltage scaling, dynamic power-performance management, and energy-efficient signaling, must be employed to adhere to the stringent energy constraint. The constraint itself is set by the energy source, so energy harvesting holds tremendous promise toward enabling sophisticated systems without straining user lifestyle. Further, once harvested, efficient delivery of the low-energy levels, as well as robust operation in the aggressive low-power modes, requires careful understanding and treatment of the specific design limitations that dominate this realm. We outline the performance and power constraints of biomedical devices, and present circuit techniques to achieve complete systems operating down to power levels of microwatts. In all cases, approaches that leverage advanced technology trends are emphasized.

/pdf/ultralow-power-electronics-for-biomedical-applications-218r684s95.pdf

Ultralow-Power Electronics for Biomedical Applications

A voltage reference circuit operating with all transistors biased in weak inversion, providing a mean reference voltage of 257.5 mV, has been fabricated in 0.18 m CMOS technology. The reference voltage can be approximated by the difference of transistor threshold voltages at room temperature. Accurate subthreshold design allows the circuit to work at room temperature with supply voltages down to 0.45 V and an average current consumption of 5.8 nA. Measurements performed over a set of 40 samples showed an average temperature coefficient of 165 ppm/ C with a standard deviation of 100 ppm/ C, in a temperature range from 0 to 125°C. The mean line sensitivity is ≈0.44%/V, for supply voltages ranging from 0.45 to 1.8 V. The power supply rejection ratio measured at 30 Hz and simulated at 10 MHz is lower than -40 dB and -12 dB, respectively. The active area of the circuit is ≈0.043mm2.

/pdf/a-2-6-nw-0-45-v-temperature-compensated-subthreshold-cmos-vvhazts3nf.pdf

A 2.6 nW, 0.45 V Temperature-Compensated Subthreshold CMOS Voltage Reference

This paper presents a digital signal processing IC, including AD/DA converters, for one-chip hearing instruments. An on-chip infrared remote control receiver is used to load a program Into the digital signal processor (DSP). The complete IC consumes 2 mW from a single cell battery and operates with supply voltages down to 0.9 V. The oversampling A/D and D/A converters show a dynamic range of 77 and 93 dBA, respectively. Only a few external capacitors are needed. The chip area is 35 mm/sup 2/ in a low-threshold 0.8-/spl mu/m CMOS process.

B.M.J. Kup

Papers

A DSP-based hearing instrument IC