Provided are a semiconductor device, which can facilitate a salicide process and can prevent a gate from being damaged due to misalign, and a method of manufacturing of the semiconductor device. The method includes forming a first insulation layer pattern on a substrate having a gate pattern and a source/drain region formed at both sides of the gate pattern, the first insulation layer pattern having an exposed portion of the source/drain region, forming a silicide layer on the exposed source/drain region, forming a second insulation layer on the entire surface of the substrate to cover the first insulation layer pattern and the silicide layer, and forming a contact hole in the second insulation layer to expose the silicide layer.

Semiconductor devices and methods of manufacturing the same

Nanoceria is an exceptionally versatile, commercially valuable catalytic material whose properties vary dramatically from that of the bulk material. Nanoceria's redox properties can be tuned by choice of method of preparation, particle size, nature and level of dopant, particle shape and surface chemistry. The two oxidation states of the cerium element in the lattice make possible the formation of oxygen vacancies which are essential to the high reactivity of the material, its oxygen buffering capability and thus its ability to act as a catalyst for both oxidation and reduction reactions. Ceria has important commercial utility in the areas of chemical mechanical polishing and planarization, catalytic converters and diesel oxidation catalysts, intermediate temperature solid oxide fuel cells and sensors. Its potential future uses include chemical looping combustion, photolytic and thermolytic water splitting for hydrogen production and as a therapeutic agent for the treatment of certain human diseases. We have seen that the method of synthesis, particle size, stabilizing corona, and purity dictate where it is used commercially. Finally, in regards to the prescient words of Dr. Feynman, we note that while there is indeed “plenty of room at the bottom”, there quite possibly exists an optimal nanoceria size of between 2–3 nm that provides maximal reactivity and thermodynamic stability.

/pdf/exploring-the-properties-and-applications-of-nanoceria-is-2hwuvjo7e5.pdf

Exploring the properties and applications of nanoceria: is there still plenty of room at the bottom?

Methods are provided for dual selective deposition of a first material on a first surface of a substrate and a second material on a second, different surface of the same substrate. The selectively deposited materials may be, for example, metal, metal oxide, or dielectric materials.

Dual selective deposition

A fundamental, yet underexplored, materials system is the interface between biological molecules and inorganic surfaces. In an elemental approach to this problem, we have systematically examined the adhesion of amino acids to a series of inorganic surfaces including metals, insulators, and semiconductors. Significant differential adhesion is observed over the full complement of amino acids, determined largely by amino acid side-chain charge. Extensive mapping of the amino acid adhesion versus materials in multiple solutions is presented, with preliminary mechanisms derived from concentration and pH dependence. These results provide an empirical basis for building peptide to inorganic surface structures, and, using this adhesion data, we design inorganic nanostructures that are shown to selectively bind to prescribed primary peptide sequences.

/pdf/differential-adhesion-of-amino-acids-to-inorganic-surfaces-3uoytp9v9m.pdf

Differential Adhesion of Amino Acids to Inorganic Surfaces

Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.

Selective deposition of metals, metal oxides, and dielectrics

https://iopscience.iop.org/article/10.1149/2.073206jes/pdf

Cobalt Polishing with Reduced Galvanic Corrosion at Copper/Cobalt Interface Using Hydrogen Peroxide as an Oxidizer in Colloidal Silica-Based Slurries

http://esl.ecsdl.org/content/14/7/H306.full.pdf

Controlling the Galvanic Corrosion of Copper during Chemical Mechanical Planarization of Ruthenium Barrier Films

Silica-based slurries containing potassium periodate (KIO 4 ) at 0.015 M concentration, close to its solubility limit of 0.018 M, polished ruthenium at ∼20 nm/min at an applied pressure of 2 psi. Moreover, by utilizing the increase in the solubility of KIO 4 achieved by the addition of potassium hydroxide, ruthenium removal rates (RRs) were enhanced to ∼65 nm/min at pH 9. At this pH, the toxic Ru0 4 does not form, making it potentially attractive for a manufacturing environment. The RRs obtained with silica abrasives are higher than those obtained with alumina abrasives at 0.015 M KIO 4 . A removal mechanism with KIO 4 as the oxidizing agent is proposed based on the formation of several ruthenium oxides, some of which formed residues on the polishing pad below a pH of ∼7. The removal rate selectivities of ruthenium to copper and silicon dioxide are ∼1.3:1 and ∼30:1, respectively.

Ruthenium Polishing Using Potassium Periodate as the Oxidizer and Silica Abrasives

We discuss the role of several additives used with ceria-based dispersions to polish silicon dioxide films and investigate their interaction with both the abrasives and silicon dioxide films using several techniques. Our results suggest that the amount of adsorption of the additives on the ceria abrasives controls the reactivity of the abrasives with the silicon dioxide film and, hence, the silicon dioxide removal rates (RRs). With several additives, the complete blockage of the reactive species and the reduction of the oxide RR to <2 nm/min occur only when the amount of the additive adsorbed has reached a limiting value.

Role of Different Additives on Silicon Dioxide Film Removal Rate during Chemical Mechanical Polishing Using Ceria-Based Dispersions

https://iopscience.iop.org/article/10.1149/2.0111709jss/pdf

B. Peethala

Papers

Cobalt Polishing with Reduced Galvanic Corrosion at Copper/Cobalt Interface Using Hydrogen Peroxide as an Oxidizer in Colloidal Silica-Based Slurries

Controlling the Galvanic Corrosion of Copper during Chemical Mechanical Planarization of Ruthenium Barrier Films

Ruthenium Polishing Using Potassium Periodate as the Oxidizer and Silica Abrasives

Role of Different Additives on Silicon Dioxide Film Removal Rate during Chemical Mechanical Polishing Using Ceria-Based Dispersions

Citric Acid as a Complexing Agent in Chemical Mechanical Polishing Slurries for Cobalt Films for Interconnect Applications