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Baoqin Fu

Researcher at Sichuan University

Publications -  59
Citations -  897

Baoqin Fu is an academic researcher from Sichuan University. The author has contributed to research in topics: Tungsten & Heat flux. The author has an hindex of 15, co-authored 46 publications receiving 697 citations. Previous affiliations of Baoqin Fu include Chinese Academy of Sciences & Beijing University of Chemical Technology.

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Calculation of the surface energy of bcc-metals with the empirical electron theory

TL;DR: In this paper, the anisotropy of spatial distribution of covalent bonds of hexagonal close-packed (hcp) metals such as Be, Mg, Sc, Ti, Co, Zn, Y, Zr, Tc, Cd, Hf, and Re, has been analyzed.
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Surface morphology and deuterium retention in tungsten exposed to high flux D plasma at high temperatures

TL;DR: In this paper, surface modifications and deuterium retention induced in tungsten by high fluxes (1024 m−2 s−1) low energy (38 eV) D ions were studied as a function of surface temperature.
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Observations of orientation dependence of surface morphology in tungsten implanted by low energy and high flux D plasma

TL;DR: In this article, a correlation between blisters and nanostructures with grain orientation was examined on recrystallized tungsten to exclude the influence of defects introduced during plastic deformation on the pattern of surface modification.
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Recrystallization and grain growth behavior of rolled tungsten under VDE-like short pulse high heat flux loads

TL;DR: In this paper, a linear relationship between the logarithm of average grain size and the inverse of maximum surface temperature (1/Tmax) was found and accordingly the activation energy for grain growth in temperature evolution up to Tmax in 1.5 s of the short pulse HHF load was deduced.
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Calculation and analysis of lattice thermal conductivity in tungsten by molecular dynamics

TL;DR: In this paper, the thermal conductivities of tungsten phonons with many different conditions, such as different temperatures, different heat flows, different crystallographic orientation and the presence of grain boundary (GB), have been calculated and discussed in detail.