A method for forming a doped region in a solar cell includes preparing a first and second surface of a substrate, forming a first doped region doped with a first dopant in a part of the first surface, forming a silicon oxide layer on the first surface, the silicon oxide layer including a first silicon oxide layer on the first doped region and having a first thickness, and a second silicon oxide layer on a portion of the first surface undoped by the first dopant and having a second thickness that is less than the first thickness, implanting a second dopant from outside the first surface into the first silicon oxide layer and the second silicon oxide layer, and forming a second doped region adjacent the first doped region by performing heat treatment on the first silicon oxide layer, the second silicon oxide layer, and the substrate.

Solar cell and manufacturing method thereof

A solar cell and a method of manufacturing the same are disclosed. The solar cell includes a substrate of a first conductive type having at least one via hole; an emitter layer only on at least a portion of the via hole and at least one selected from a group consisting of an incident surface and side surfaces of the substrate, the emitter layer having a second conductive type opposite the first conductive type; at least one first electrode on the incident surface, the first electrode being electrically connected to the emitter layer; a second electrode connected to an opposite surface to the incident surface; and at least one first electrode current collector on the opposite surface, the at least one first electrode current collector being insulated from the second electrode and being electrically connected to the at least one first electrode through the via hole.

Solar cell and method of manufacturing the same

It is an object to provide a photoelectric conversion device which detects light ranging from weak light to strong light. The present invention relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer, an amplifier circuit including a thin film transistor and a bias switching means, where a bias which is connected to the photodiode and the amplifier circuit is switched by the bias switching means when intensity of incident light exceeds predetermined intensity, and accordingly, light which is less than the predetermined intensity is detected by the photodiode and light which is more than the predetermined intensity is detected by the thin film transistor of the amplifier circuit. By the present invention, light ranging from weak light to strong light can be detected.

Photoelectric conversion device and manufacturing method thereof

A group III nitride nanorod light emitting device and a method of manufacturing thereof. The method includes preparing a substrate, forming an insulating film including one or more openings exposing parts of the substrate on the substrate, growing first conductive group III nitride nanorod seed layers on the substrate exposed through the openings by supplying a group III source gas and a nitrogen (N) source gas thereto, growing first conductive group III nitride nanorods on the first conductive group III nitride nanorod seed layers by supplying the group III source gas and an impurity source gas in a pulse mode and continuously supplying the N source gas, forming an active layer on a surface of each of the first conductive group III nitride nanorods, and forming a second conductive nitride semiconductor layer on the active layer.

Group iii nitride nanorod light emitting device and method of manufacturing thereof

The solar cell structure according to the present invention comprises a nanowire (205) that constitutes the light absorbing part of the solar cell structure and a passivating shell (209) that encloses at least a portion of the nanowire (205). In a first aspect of the invention, the passivating shell (209) of comprises a light guiding shell (210), which preferably has a highand indirect bandgap to provide light guiding properties. In a second aspect of the invention, the solar cell structure comprises a plurality of nanowires which are positioned with a maximum spacing between adjacent nanowires which is shorter than the wavelength of the light which the solar cell structure is intended to absorbin order to provide an effective medium for light absorption. Thanks to the invention it is possible to provide high efficiency solar cell structures.

Nanowire- based solar cell structure

In some embodiments, the present invention is directed to photovoltaic devices (e.g., solar cells) comprising elongated nanostructures coated with a thin conformal coating. Typically, such a conformal coating provides a substantially continuous charge separating junction. Depending on the embodiment, such devices can comprise a p-n junction, a p-i-n junction (with a thin intrinsic tunneling layer in between the p and n layers), and/or a heterojunction. In all cases, however, the elongated nanostructures are active photovoltaic (PV) elements in the photovoltaic device. Additionally, the present invention is also directed at methods of making and using such devices. Such photovoltaic or solar cell devices are likely to have cost parity with thin film solar cells, but with higher efficiency due to a charge separating junction that is conformal. Additionally, the nanostructures provide excellent light trapping and optical absorption properties.

Single conformal junction nanowire photovoltaic devices

The optical properties of silicon nanowire films fabricated on bulk Si and glass substrates are reported. The total reflectance of aligned nanowire arrays formed by a wet etch process on bulk Si is lower than the control over all wavelengths below the bandgap, varying from ~1% at 300 nm to les 10% at 1,000 nm. Similar results are observed for nanowire thin films. The observed reflectance is related to the so-called "moth-eye" effect. Modeling work shows strong resonance of light within and between nanowires

Interaction of Light with Si Nanowire Films

Nanofils dans des capteurs solaires à couche mince en silicium

Eine photovoltaische Vorrichtung, die mehrere auf der Oberflache eines Substrats angeordnete langliche Nanostrukturen und einen konform uber den langlichen Nanostrukturen abgelagerten mehrschichtigen Film umfasst, der mehrere photoaktive Grenzschichten bildet. A photovoltaic device comprising a plurality of arranged on the surface of a substrate elongated nanostructures and a conformally over the elongated nanostructures deposited multilayer film, which forms a plurality of photoactive junctions. Ein Verfahren zum Herstellen einer derartigen photovoltaischen Vorrichtung umfasst das Erzeugen mehrerer langlicher Nanostrukturen auf einer Substratoberflache und das konforme Ablagern eines mehrere photoaktive Grenzschichten bildenden mehrschichtigen Films. A method for producing such a photovoltaic device comprises generating a plurality of elongate nanostructures on a substrate surface and the conformal deposition of a plurality of photoactive boundary layers forming the multilayer film. Die mehreren photoaktiven Grenzschichten sind dazu ausgelegt, verschiedene Lichtwellenlangen einzufangen. The plurality of photoactive junctions are designed to capture different wavelengths of light. Ein Solarkollektor umfasst mindestens eine photovoltaische Vorrichtung. A solar collector comprising at least one photovoltaic device.

Bastian Arie Korevaar

Papers

Single conformal junction nanowire photovoltaic devices

Interaction of Light with Si Nanowire Films

Nanofils dans des capteurs solaires à couche mince en silicium

Amorph-kristalline Solarzellen mit Tandem-Nanostruktur Amorphous-to-crystalline solar cells with tandem nanostructure

Nanodrähte in Dünnschichtsiliziumsolarzellen