Patent
Single conformal junction nanowire photovoltaic devices
TLDR
In this paper, a conformal coating is applied to photovoltaic (PV) elements in order to provide a charge separating junction that is conformal and provide excellent light trapping and optical absorption properties.Abstract:
In some embodiments, the present invention is directed to photovoltaic devices (e.g., solar cells) comprising elongated nanostructures coated with a thin conformal coating. Typically, such a conformal coating provides a substantially continuous charge separating junction. Depending on the embodiment, such devices can comprise a p-n junction, a p-i-n junction (with a thin intrinsic tunneling layer in between the p and n layers), and/or a heterojunction. In all cases, however, the elongated nanostructures are active photovoltaic (PV) elements in the photovoltaic device. Additionally, the present invention is also directed at methods of making and using such devices. Such photovoltaic or solar cell devices are likely to have cost parity with thin film solar cells, but with higher efficiency due to a charge separating junction that is conformal. Additionally, the nanostructures provide excellent light trapping and optical absorption properties.read more
Citations
More filters
Patent
Solar cell and manufacturing method thereof
TL;DR: In this article, a method for forming a doped region in a solar cell includes preparing a first and second surface of a substrate, forming a first region doped with a first dopant in a part of the first surface and forming a silicon oxide layer on the first region.
Patent
Solar cell and method of manufacturing the same
TL;DR: In this paper, a solar cell with a substrate of a first conductive type having at least one via hole and an emitter layer only on at least a portion of the via hole is described.
Patent
Photoelectric conversion device and manufacturing method thereof
TL;DR: In this article, a photoelectric conversion device having a photodiode having a photo-electric conversion layer, an amplifier circuit including a thin film transistor and a bias switching means is presented.
Patent
Group iii nitride nanorod light emitting device and method of manufacturing thereof
TL;DR: In this article, a group III nitride nanorod light emitting device and a method of manufacturing thereof is presented, which includes preparing a substrate, forming an insulating film including one or more openings exposing parts of the substrate on the substrate, growing the first conductive group III nano-drone seed layers on a substrate exposed through the openings by supplying group III source gas and a nitrogen (N) source gas thereto.
Patent
Nanowire- based solar cell structure
TL;DR: The solar cell structure according to the present invention comprises a nanowire (205) that constitutes the light absorbing part of the solar cell and a passivating shell (209) that encloses at least a portion of the nanowires as discussed by the authors.
References
More filters
Patent
Nanostructures formed of branched nanowhiskers and methods of producing the same
Lars Samuelson,Knut Deppert +1 more
TL;DR: In this paper, a method of forming a nanostructure having the form of a tree, consisting of a first stage and a second stage, was proposed, where one or more catalytic particles on a substrate surface, and growing a first nanowhisker via each catalytic particle.
Patent
Semiconductor device with tunable energy band gap
TL;DR: In this paper, the authors proposed a device based on a semiconducting material in mechanical contact with a material that exhibits a reversible volume change when properly addressed, e.g. a phase change material.
Patent
Semiconductor element and its manufacturing method
TL;DR: In this article, the authors proposed a semiconductor element consisting of a first electrode, a nanotube connected electrically with the first electrode and a second electrode connected with the semiconductor layer and not touching the nanotubes.
Patent
Amorphous silicon solar cell
TL;DR: In this paper, a columnar Si crystal is grown on a substrate vertically to a substrate surface, and a plurality of amorphous silicon layers 5, 6, 7 are deposited on the surfaces of the substrate 1 and on a surface of the columnar si crystal 3 and corrugated in their vertical sections.