Beinn V. O. Muir

TL;DR: OFETs with a bottom-gate (BG) bottom-contact (BC) geometry have an advantage in that the organic semiconducting layer is deposited last, allowing easy fabrication and patterning of micron-scale OFET channels, electrodes and interconnects by conventional photolithographic methods.

TL;DR: In this article, a scalable process flow on plastic is presented, which enables the fabrication of flexible nano-imprinted organic field effect transistors (OFETs) with self-aligned contacts and solution-processed semiconductor and dielectric layers, at processing temperatures ≤ 150 °C.

TL;DR: In this article, a combination of nanoimprint lithography, gate-source/drain self-alignment, and gravure and inkjet printing was used to fabricate organic field effect transistors on flexible plastic substrates.

TL;DR: The optimization of gravure printed metal ink, dielectric, and semiconductor formulations is demonstrated, as characterized by the spreading of printed structures and variation in print homogeneity.