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Benoit Deveaud

Researcher at École Polytechnique Fédérale de Lausanne

Publications -  352
Citations -  9809

Benoit Deveaud is an academic researcher from École Polytechnique Fédérale de Lausanne. The author has contributed to research in topics: Exciton & Quantum well. The author has an hindex of 42, co-authored 352 publications receiving 9092 citations. Previous affiliations of Benoit Deveaud include École Polytechnique & Orange S.A..

Papers
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Proceedings ArticleDOI

Ultrafast Dynamics and Modelling of Semiconductor Optical Amplifiers for WDM Applications

TL;DR: In this article, the cross gain dynamics of the amplifiers are investigated and the results of the experiments are shown to be similar to the results in this paper, but with a different configuration of the amplifier.
Book ChapterDOI

Radiative Decay, Diffusion, Localization and Dephasing of Trions and Excitons in CdTe Quantum Wells

TL;DR: In this article, excitons and trions in CdTe modulation-doped quantum well are investigated, as a function of temperature and in the low density regime, by picosecond photoluminescence as well as three-pulse four-wave mixing experiments.
Journal ArticleDOI

Temperature dependence of the photoluminescence lifetime in disordered quantum wires

TL;DR: In this paper, the role of disorder on the temperature dependence of the photoluminescence lifetime was studied and it was shown that at low temperature, the exciton population is not thermalized in disordered quantum wires and that the lifetime is mainly determined by the localization length of an exciton.
Proceedings ArticleDOI

Narrow-linewidth complex-coupled DFB lasers with gain coupling induced byvertical emission

TL;DR: In this paper, a GaAs quantum-well complex-coupled DFB laser with gain coupling induced by vertical emission was demonstrated, achieving a spectral linewidth as narrow as 15 MHz and a side-mode suppression ratio larger than 40 dB.
Journal ArticleDOI

Electron relaxation by LO phonons in quantum wires

TL;DR: In this paper, the average single electron relaxation time from an excited level is shown either to increase or decrease as a function of the initial energy, showing the wire size dependent accelerating and energy lowering effects of an additional phenomenological intrasubband thermalization.