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Benoit Deveaud
Researcher at École Polytechnique Fédérale de Lausanne
Publications - 352
Citations - 9809
Benoit Deveaud is an academic researcher from École Polytechnique Fédérale de Lausanne. The author has contributed to research in topics: Exciton & Quantum well. The author has an hindex of 42, co-authored 352 publications receiving 9092 citations. Previous affiliations of Benoit Deveaud include École Polytechnique & Orange S.A..
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Chromium profiles in semi‐insulating GaAs after annealing with a Si3N4 encapsulant
TL;DR: In this paper, it was shown that after thermal annealing (900 °C, 20 min) under Si3N4, Cr diffuses towards the GaAs surface leaving a Cr concentration depletion zone underneath.
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Second-Order Time Correlations within a Polariton Bose-Einstein Condensate in a CdTe Microcavity
TL;DR: Second-order time correlations of polaritons have been measured across the condensation threshold in a CdTe microcavity, demonstrating the transition from a thermal-like state to a coherent state with increasing polariton density.
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Determination of the exciton formation in quantum wells from time-resolved interband luminescence.
Jacek Szczytko,L. Kappei,J. Berney,François Morier-Genoud,M. T. Portella-Oberli,Benoit Deveaud +5 more
TL;DR: The results of a detailed time-resolved luminescence study carried out on a very high quality InGaAs quantum well sample where the contributions at the energy of the exciton and at the band edge can be clearly separated are presented.
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Extremely fast high-gain and low-current SOA by optical speed-up at transparency
M.-A. Dupertuis,J.L. Pleumeekers,T. Hessler,P.E. Selbmann,Benoit Deveaud,Beatrice Dagens,Jean-Yves Emery +6 more
TL;DR: A new configuration for semiconductor optical amplifiers (SOAs) is proposed, called optical speed-up at transparency (OSAT), which allows to speed up the gain recovery of SOAs and their saturation power without sacrificing the gain, nor increasing the applied current.
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Resonant femtosecond emission from quantum well excitons: The role of Rayleigh scattering and luminescence
TL;DR: In this article, the authors studied the ultrafast properties of secondary radiation of semiconductor quantum wells under resonant excitation and showed that the exciton density dependence allows one to identify the origin of the secondary radiation.