B
Bernard Gil
Researcher at University of Montpellier
Publications - 411
Citations - 10876
Bernard Gil is an academic researcher from University of Montpellier. The author has contributed to research in topics: Photoluminescence & Quantum well. The author has an hindex of 48, co-authored 399 publications receiving 9485 citations. Previous affiliations of Bernard Gil include Centre national de la recherche scientifique & Ioffe Institute.
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Hexagonal boron nitride is an indirect bandgap semiconductor
TL;DR: In this article, the authors resolve the long-debated issue of the nature and value of the bandgap in hexagonal boron nitride by providing evidence for an indirect bandgap at 5.955 eV and an exciton binding energy of about 130 meV.
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Photonics with hexagonal boron nitride
Joshua D. Caldwell,Igor Aharonovich,Guillaume Cassabois,James H. Edgar,Bernard Gil,Dimitri Basov +5 more
TL;DR: Hexagonal boron nitride (hBN) is a natural hyperbolic material in the mid-IR range, in which photonic material options are sparse as discussed by the authors.
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Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells.
Mathieu Leroux,Nicolas Grandjean,M. Laügt,Jean Massies,Bernard Gil,Pierre Lefebvre,Pierre Bigenwald +6 more
TL;DR: In this paper, the authors show that the origin of the electric field is predominently due to spontaneous polarization effects rather than a piezoelectric effect in the well material and conclude that the GaN layers are nearly unstrained, whereas the (AI,Ga)N barriers are pseudomorphically strained on GaN.
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ZnO as a material mostly adapted for the realization of room-temperature polariton lasers
M. Zamfirescu,Alexey Kavokin,Bernard Gil,Guillaume Malpuech,Guillaume Malpuech,Mikhail Kaliteevski +5 more
TL;DR: In this paper, the authors report the direct optical measurement of the exciton oscillator strength f in ZnO and propose a model of the microcavity structure for the observation of the polariton laser effect.
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Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetry
TL;DR: This investigation leads to revision of the previous modelings based on quasicubic descriptions of the valence-band physics and gives a set of deformation potentials for the hexagonal GaN semiconductor.