B
Bernd Burchard
Researcher at Elmos Semiconductor
Publications - 68
Citations - 1324
Bernd Burchard is an academic researcher from Elmos Semiconductor. The author has contributed to research in topics: Signal & Signal transfer function. The author has an hindex of 13, co-authored 68 publications receiving 1254 citations. Previous affiliations of Bernd Burchard include Ruhr University Bochum & Leipzig University.
Papers
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Journal ArticleDOI
Single photon emission from SiV centres in diamond produced by ion implantation
TL;DR: In this paper, the authors reported the observation of single photon emission from single SiV (silicon-vacancy) centers in diamond produced by ion implantation and discussed problems that arise from the nonradiaditve transitions which lower the brightness of the source.
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Generation of single color centers by focused nitrogen implantation
Jan Meijer,Bernd Burchard,M. Domhan,C. Wittmann,Torsten Gaebel,I. Popa,Fedor Jelezko,Jörg Wrachtrup +7 more
TL;DR: In this paper, single defect centers in diamond have been generated via nitrogen implantation using single defect center fluorescence microscopy optical and electron paramagnetic resonance spectra unambiguously show that the produced defect is the nitrogen-vacancy color center.
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Generation of single colour centers by focussed nitrogen implantation
J. Meijer,Bernd Burchard,M. Domhan,C. Wittmann,Torsten Gaebel,I. Popa,Fedor Jelezko,J. Wrachtrup +7 more
TL;DR: In this article, single defect centers in diamond have been generated via nitrogen implantation via single defect center fluorescence microscopy and optical and EPR spectra unambiguously show that the produced defect is the nitrogen-vacancy colour center.
Journal ArticleDOI
Towards the implanting of ions and positioning of nanoparticles with nm spatial resolution
Jan Meijer,S. Pezzagna,T. Vogel,Bernd Burchard,H.H. Bukow,Ivo W. Rangelow,Y. Sarov,Hartmut Wiggers,Ingo Plümel,Fedor Jelezko,Jörg Wrachtrup,Ferdinand Schmidt-Kaler,Wolfgang Schnitzler,Kilian Singer +13 more
TL;DR: In this paper, the authors present a technique to implant ions through a small hole in the tip of an atomic force microscope. But this technique is not suitable for the handling of small structures using different projectiles at kinetic energies between 0.5 and 5.0 keV.
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Concept of deterministic single ion doping with sub-nm spatial resolution
Jan Meijer,T. Vogel,Bernd Burchard,Ivo W. Rangelow,L. Bischoff,Jörg Wrachtrup,M. Domhan,Fedor Jelezko,Wolfgang Schnitzler,Stephan Schulz,Kilian Singer,Ferdinand Schmidt-Kaler +11 more
TL;DR: In this paper, a linear ion trap is used as an ion source for deterministic implantation of single atoms into solids, allowing a deterministic control of the number of implanted atoms and a spatial resolution of less than 1 nm.