A self-powered β-Ga2O3/CsCu2I3 heterojunction photodiode responding to deep ultraviolet irradiation

Ga2O3-based photodetectors are promising for deep ultraviolet (DUV) detection owing to the relatively large bandgap (>4.5 eV) of Ga2O3. High-temperature applications, such as flame detection and aerospace have been a major challenge to the reliability of electronic devices including photodetectors. All-oxide electronic devices have great potential for applications that require high thermal stability. Therefore, we constructed an all-oxide self-powered DUV photodetector based on ϵ-Ga2O3/ZnO heterojunction and examined its ruggedness in a high-temperature environment up to 600 K. A photocurrent of up to 0.3 μA and a photo-to-dark current ratio of ∼8000 were observed at room temperature. In addition, the ϵ-Ga2O3/ZnO heterojunction remained functional even at an ambient temperature of 600 K. It was also found that sensing performance including photo-to-dark current ratio (PDCR), responsivity, detectivity, and external quantum efficiency degraded as the temperature increased. Detailed generation/recombination processes, as well as carrier transport, were explored to reveal physical insights. The thermal stability of the ϵ-Ga2O3/ZnO photodetector is thus examined, which would provide the basis for further development.

High-temperature reliability of all-oxide self-powered deep UV photodetector based on ϵ-Ga2O3/ZnO heterojunction

Ta-Doped Ga2O3 Epitaxial Films on Porous p-GaN Substrates: Structure and Self-Powered Solar-Blind Photodetectors

Boosting the photoresponse speed of visible-light-active bismuth ferrite thin films based on Fe-site substitution strategy and favorable heterostructure design

A broadband UV-visible photodetector based on a Ga2O3/BFO heterojunction

High-sensitive, self-powered deep UV photodetector based on p-CuSCN/n-Ga2O3 thin film heterojunction

Ga2O3 is one of the most suitable semiconductor materials for performing deep UV photoelectric detection. In this work, a self-powered deep UV photodetector based on a Ga2O3/BFO heterojunction is fabricated via solution spin-coating and metal-organic chemical vapor deposition (MOCVD) methods. Without biasing driven, the device achieves an extreme low dark current ( ${I}_{dark}$ ) of 8.38 fA, a photo-to-dark current ratio ( PDCR ) of $1.66\times10$ 5, a high specific detectivity ( ${D} \ast $ ) of $6.1\times 10^{12}$ Jones and an open-circuit voltage ( ${V}_{\textit {oc}}$ ) of 0.55 V responding to deep UV irradiation (254 nm in this work). Through analyzing the band diagram of the heterojunction, the intrinsic physical characteristics of the photodetector are discussed. Results show that the photodetector has excellent deep UV signal detecting ability, indicating that Ga2O3/BFO heterojunction is a potential candidate for performing self-powered deep UV photodetection.

Bing-Yang Sun

Papers

A broadband UV-visible photodetector based on a Ga2O3/BFO heterojunction

High-sensitive, self-powered deep UV photodetector based on p-CuSCN/n-Ga2O3 thin film heterojunction

Solution Spin-Coated BiFeO 3 Onto Ga 2 O 3 Towards Self-Powered Deep UV Photo Detector of Ga 2 O 3 /BiFeO 3 Heterojunction