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Weihua Tang
Researcher at Beijing University of Posts and Telecommunications
Publications - 447
Citations - 11766
Weihua Tang is an academic researcher from Beijing University of Posts and Telecommunications. The author has contributed to research in topics: Thin film & Photodetector. The author has an hindex of 45, co-authored 369 publications receiving 8518 citations. Previous affiliations of Weihua Tang include Nanjing University of Posts and Telecommunications & Peking University.
Papers
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First principles study of structural, vibrational and electronic properties of graphene-like MX2 (M=Mo, Nb, W, Ta; X=S, Se, Te) monolayers
TL;DR: In this article, the structural, vibrational and electronic properties of the monolayer graphene-like transition-metal dichalcogenide (MX2) sheets were investigated using first principles calculations.
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Fabrication of β-Ga_2O_3 thin films and solar-blind photodetectors by laser MBE technology
Daoyou Guo,Zhenping Wu,Peigang Li,Y. H. An,Han Liu,Xuncai Guo,Hui Yan,G. F. Wang,Changlong Sun,Linghong Li,Weihua Tang +10 more
TL;DR: In this article, a laser molecular beam epitaxy technology was employed to deposit β-gallium oxide (β-Ga2O3) on (0001) sapphire substrates.
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Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors
Daoyou Guo,Zhenping Wu,Y. H. An,Xuncai Guo,Xulong Chu,Changlong Sun,Linghong Li,Peigang Li,Peigang Li,Weihua Tang +9 more
TL;DR: In this paper, metal/semiconductor/metal structured photodetectors were fabricated using as-grown film and annealed film separately, where the Schottky barrier controlled electron transport and the quantity of photogenerated carriers trapped by oxygen vacancy significant decreasing.
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Self-Powered Ultraviolet Photodetector with Superhigh Photoresponsivity (3.05 A/W) Based on the GaN/Sn:Ga2O3 pn Junction.
Daoyou Guo,Yuanli Su,Haoze Shi,Peigang Li,Nie Zhao,Junhao Ye,Shunli Wang,Aiping Liu,Zhengwei Chen,Chaorong Li,Weihua Tang +10 more
TL;DR: This study generates a super-high-performance self-powered UV photodetector based on a GaN/Sn:Ga2O3 pn junction that has a high UV/visible rejection ratio, and a fast photoresponse time of 18 ms without bias.
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Zero-Power-Consumption Solar-Blind Photodetector Based on β-Ga2O3/NSTO Heterojunction
Daoyou Guo,Daoyou Guo,Han Liu,Peigang Li,Peigang Li,Zhenping Wu,Shunli Wang,Can Cui,Chaorong Li,Weihua Tang,Weihua Tang +10 more
TL;DR: The results strongly suggest that a photodetector based on β-Ga2O3 thin-film heterojunction structure can be practically used to detect weak solar-blind signals because of its high photoconductive gain.