Reliable, efficient electrically pumped silicon-based lasers would enable full integration of photonic and electronic circuits, but have previously only been realized by wafer bonding. Here, we demonstrate continuous-wave InAs/GaAs quantum dot lasers directly grown on silicon substrates with a low threshold current density of 62.5 A cm–2, a room-temperature output power exceeding 105 mW and operation up to 120 °C. Over 3,100 h of continuous-wave operating data have been collected, giving an extrapolated mean time to failure of over 100,158 h. The realization of high-performance quantum dot lasers on silicon is due to the achievement of a low density of threading dislocations on the order of 105 cm−2 in the III–V epilayers by combining a nucleation layer and dislocation filter layers with in situ thermal annealing. These results are a major advance towards reliable and cost-effective silicon-based photonic–electronic integration.

/pdf/electrically-pumped-continuous-wave-iii-v-quantum-dot-lasers-rmg1qnqnyt.pdf

Electrically pumped continuous-wave III–V quantum dot lasers on silicon

Research in photonic computing has flourished due to the proliferation of optoelectronic components on photonic integration platforms. Photonic integrated circuits have enabled ultrafast artificial neural networks, providing a framework for a new class of information processing machines. Algorithms running on such hardware have the potential to address the growing demand for machine learning and artificial intelligence in areas such as medical diagnosis, telecommunications, and high-performance and scientific computing. In parallel, the development of neuromorphic electronics has highlighted challenges in that domain, particularly related to processor latency. Neuromorphic photonics offers sub-nanosecond latencies, providing a complementary opportunity to extend the domain of artificial intelligence. Here, we review recent advances in integrated photonic neuromorphic systems, discuss current and future challenges, and outline the advances in science and technology needed to meet those challenges. Photonics offers an attractive platform for implementing neuromorphic computing due to its low latency, multiplexing capabilities and integrated on-chip technology.

Photonics for artificial intelligence and neuromorphic computing

Research in photonic computing has flourished due to the proliferation of optoelectronic components on photonic integration platforms. Photonic integrated circuits have enabled ultrafast artificial neural networks, providing a framework for a new class of information processing machines. Algorithms running on such hardware have the potential to address the growing demand for machine learning and artificial intelligence, in areas such as medical diagnosis, telecommunications, and high-performance and scientific computing. In parallel, the development of neuromorphic electronics has highlighted challenges in that domain, in particular, related to processor latency. Neuromorphic photonics offers sub-nanosecond latencies, providing a complementary opportunity to extend the domain of artificial intelligence. Here, we review recent advances in integrated photonic neuromorphic systems, discuss current and future challenges, and outline the advances in science and technology needed to meet those challenges.

Highly efficient heterogeneous catalytic materials derived from metal-organic framework supports/precursors

Thanks to advanced semiconductor microfabrication technology, chip-scale integration and miniaturization of lab-on-a-chip components, silicon-based optical biosensors have made significant progress for the purpose of point-of-care diagnosis In this review, we provide an overview of the state-of-the-art in evanescent field biosensing technologies including interferometer, microcavity, photonic crystal, and Bragg grating waveguide-based sensors Their sensing mechanisms and sensor performances, as well as real biomarkers for label-free detection, are exhibited and compared We also review the development of chip-level integration for lab-on-a-chip photonic sensing platforms, which consist of the optical sensing device, flow delivery system, optical input and readout equipment At last, some advanced system-level complementary metal-oxide semiconductor (CMOS) chip packaging examples are presented, indicating the commercialization potential for the low cost, high yield, portable biosensing platform leveraging CMOS processes

Silicon Photonic Biosensors Using Label-Free Detection.

Hybrid silicon lasers based on bonded III–V layers on silicon are currently the best contenders for on-chip lasers for silicon photonics. On-chip silicon light sources are highly desired for use as electrical-to-optical converters in silicon-based photonics. Zhiping Zhou and Bing Yin of Peking University in China and Jurgen Michel of Massachusetts Institute of Technology assess the three main contenders for such light sources: erbium-based light sources, germanium-on-silicon lasers and III-V-based silicon lasers. They consider operating wavelength, pumping conditions, power consumption, thermal stability and fabrication process. The scientists regard the power efficiencies of electrically pumped erbium-based lasers as being too low and the threshold currents of germanium lasers as being too high. They conclude that III–V quantum dot lasers monolithically grown on silicon show the most promise for realizing on-chip lasers.

/pdf/on-chip-light-sources-for-silicon-photonics-ky23qv18q4.pdf

On-chip light sources for silicon photonics

Correction to: Light: Science & Applications (2015) 4, e358; doi:10.1038/lsa.2015.131; published online 20 November 2015 In the version of this article originally published, the substrate used in reference 111 to grow InAs/GaAs quantum dots was silicon. However, the authors have found out that 500 nm of germanium was first grown on silicon by chemical vapor deposition before growing InAs/GaAs quantum dots.

/pdf/corrigendum-on-chip-light-sources-for-silicon-photonics-4x8yb9y599.pdf

Corrigendum: On-chip light sources for silicon photonics

Simultaneous detection of ultraviolet irradiation and vitamin C using an all-carbon-based integrated wearable system powering by a micro-supercapacitor.

A wide mode-hopping free and narrow linewidth tunable laser diode source with a Littman-Metcalf arrangement based on a diffraction grating is presented. Several experiments are carried out to demonstrate the tuning characteristics and spectral linewidth of the proposed external-cavity diode laser source. A wide no mode-hopping continuous wavelength tuning range about 59.13 nm in ultra-C-band with a narrow spectral linewidth of less than 100 kHz is obtained. An optical signal to noise ratio of more than 65 dB and an output power more than 14.8 dBm over the whole tuning range can also be realized in a long-term free running condition. The proposed tunable laser allows simultaneously mode-hopping free and narrow linewidth tunable radiation, thus opening a door for practical application such as coherent detection.

/pdf/study-on-external-cavity-diode-laser-with-a-wide-mode-1b8m9hqz.pdf

Study on external cavity diode laser with a wide mode-hopping free tuning range

A high side-mode suppression ratio external-cavity wavelength-swept laser system with a wide mode-hopping free tuning range is developed. The proposed wavelength-swept laser is based on a single-angled facet gain chip in a classical Littman-Metcalf external-cavity configuration using a blazed diffraction grating as the feedback element. The output power, side-mode suppression ratio, and tunable range of the external-cavity wavelength-swept laser system are experimentally measured. Wide mode-hopping-free continuous wavelength tuning range about 100 nm in CL-band with a side-mode suppression ratio of more than 65.64 dB are realized. An output optical power of more than 14.12 dBm over the entire tunable region can also be achieved. The proposed external-cavity wavelength-swept laser system allows simultaneously high side-mode suppression ratio and no mode-hopping tunable radiation, thus opening a door for practical applications such as optical modulation schemes.

/pdf/high-smsr-wavelength-swept-laser-with-a-cl-band-mode-hopping-27hlralx.pdf

Bing Yin

Papers

On-chip light sources for silicon photonics

Corrigendum: On-chip light sources for silicon photonics

Simultaneous detection of ultraviolet irradiation and vitamin C using an all-carbon-based integrated wearable system powering by a micro-supercapacitor.

Study on external cavity diode laser with a wide mode-hopping free tuning range

High-SMSR wavelength-swept laser with a CL-band mode-hopping free tuning range