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Bo Tan

Researcher at Ryerson University

Publications -  168
Citations -  2904

Bo Tan is an academic researcher from Ryerson University. The author has contributed to research in topics: Laser & Femtosecond. The author has an hindex of 25, co-authored 153 publications receiving 2466 citations. Previous affiliations of Bo Tan include Nanyang Technological University & St. Michael's GAA, Sligo.

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Synthesis of three-dimensional calcium carbonate nanofibrous structure from eggshell using femtosecond laser ablation.

TL;DR: The synthesized 3D nanofibrous structures can promote biomaterial interfacial properties to improve cell-platform surface interaction and develop new functional biomaterials for a variety of biomedical applications.
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A femtosecond laser-induced periodical surface structure on crystalline silicon

TL;DR: A femtosecond laser-induced periodical surface structure (LIPSS) was investigated for polished crystalline silicon as mentioned in this paper, which is similar to the classical ripples that are characterized by long, nearly parallel lines extending over the entire irradiated area on the metal and silicon surface after continuous or pulsed laser irradiation.
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Non plasmonic semiconductor quantum SERS probe as a pathway for in vitro cancer detection

TL;DR: The authors report on the development and testing of biocompatible semiconductor zinc oxide quantum probes on a platform for cell adhesion and analysis and demonstrate discrimination of cancerous and non-cancerous cells along with biomolecular sensing of DNA, RNA, proteins and lipids in vitro.
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Quantum scale organic semiconductors for SERS detection of DNA methylation and gene expression

TL;DR: The authors use quantum scale organic semiconductors and show detection of genomic DNA methylation as well as gene expression and trace the expression of two genes which are frequently used as CSC markers.
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Deep micro hole drilling in a silicon substrate using multi-bursts of nanosecond UV laser pulses

TL;DR: In this article, a multi-burst pulse train was used to drill micro holes in semiconductor substrates with nanosecond laser ablation, achieving 20 µm holes with nearly straight sidewalls in a 250 mm thick silicon substrate.