Bojun Cheng

TL;DR: Ohmic losses in plasmonic devices can be reduced by exploiting ‘resonant switching’, in which light couples to surface plAsmon polaritons only when in resonance and bypasses them otherwise.

TL;DR: In this article, a plasmonic photodetector achieving simultaneously record high bandwidth beyond 100 GHz, an internal quantum efficiency of 36% and low footprint is demonstrated, attributed to the subwavelength confinement of the optical energy in a photoconductive-germanium waveguide detector that enables shortest drift paths for photogenerated carriers and a small resistance-capacitance product.

TL;DR: It is shown that EO coefficients as large as 190 pm/V can be obtained in 150 nm wide plasmonic slot waveguides but that the coefficients decrease for narrower slots, and record-low voltage-length products are shown for slot widths in the order of 50 nm for the materials JRD1 and DLD164.

TL;DR: It is shown through experiments and simulations how the interplay between electrical, optical, and light-induced thermal forces can reversibly relocate a few atoms and enable atomic photodetection with a digital electronic response, a high resistance extinction ratio, and a low OFF-state current at room temperature.

TL;DR: In this article, an advanced technology platform has been developed to obtain Ag/SiO2/Pt devices with ultra-scaled footprints (15×× 15 nm2), inter-electrode distances down to 1'nm, and a transition from the OFF to ON resistance state relying on the relocation of only few atoms.