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Boyoung Jeong

Researcher at Korea Institute of Science and Technology

Publications -  7
Citations -  111

Boyoung Jeong is an academic researcher from Korea Institute of Science and Technology. The author has contributed to research in topics: Catalysis & Chemistry. The author has an hindex of 2, co-authored 4 publications receiving 81 citations.

Papers
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Substrate-immobilized electrospun TiO2 nanofibers for photocatalytic degradation of pharmaceuticals: The effects of pH and dissolved organic matter characteristics

TL;DR: The findings suggest that the removal of CMT, PRP, and CBZ during photocatalytic oxidation using SI TiO2 NFs is affected by the presence of DOM and/or pH, which should be importantly considered for practical applications.
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Elimination of microcystin-LR and residual Mn species using permanganate and powdered activated carbon: Oxidation products and pathways.

TL;DR: Monitoring of microcystin-LR and residual Mn2+ levels with adding KMnO4 and powdered activated carbon before and during coagulation revealed that 60 min of permanganate pre-oxidation followed by coagulant addition with PAC was the most effective approach for reducing both levels below limits stated by WHO guidelines.
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Nonvolatile memory characteristics associated with oxygen ion exchange in thin-film transistors with indium-zinc oxide channel and HfO2-x gate oxide

TL;DR: In this article , non-charge-storage-based nonvolatile memory characteristics associated with oxygen ion exchange are demonstrated in a thin-film transistor (TFT) composed of an indium-zinc oxide (IZO) channel and an oxygen-deficient HfO2-x gate oxide.
Patent

Apparatus and method for water treatment using in-situ activation of manganese dioxide catalyst

TL;DR: The apparatus for water treatment using in-situ activation of a manganese dioxide catalyst includes: a reaction bath configured to give a space where aqueous organic contaminants are removed by means of reaction with permanganate (MnO 4 − ) generated by electrochemical oxidation of manganous oxide (mnO 2 ) as discussed by the authors.
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Non-volatile charge-trap memory characteristics with low-temperature atomic layer deposited HfO2-x charge-trap layer and interfacial tunneling oxide formed by UV/ozone treatment

TL;DR: In this article , the authors investigated non-volatile charge-trap memory characteristics in the thin-film transistors with an indium-gallium-zinc oxide channel and an oxygen-deficient hafnium oxide (HfO2−x) chargetrap layer deposited by atomic layer deposition.