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Bradley N. Engel
Researcher at Freescale Semiconductor
Publications - 25
Citations - 1652
Bradley N. Engel is an academic researcher from Freescale Semiconductor. The author has contributed to research in topics: Magnetoresistive random-access memory & Magnetic field. The author has an hindex of 14, co-authored 25 publications receiving 1595 citations.
Papers
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Journal ArticleDOI
A 4-Mb toggle MRAM based on a novel bit and switching method
Bradley N. Engel,Johan Åkerman,Brian R. Butcher,Renu W. Dave,Mark F. Deherrera,Mark A. Durlam,Gregory W. Grynkewich,Jason Allen Janesky,Srinivas V. Pietambaram,N. D. Rizzo,J.M. Slaughter,Kenneth H. Smith,Jijun Sun,Saied N. Tehrani +13 more
TL;DR: In this paper, a 4Mb magnetoresistive random access memory (MRAM) with a novel magnetic bit cell and toggle switching mode is presented, which greatly improves the operational performance of the MRAM as compared to conventional MRAM.
Journal ArticleDOI
Phase-locking in double-point-contact spin-transfer devices
TL;DR: It is shown that the magnetization oscillations induced by spin-transfer in two 80-nm-diameter giant-magnetoresistance point contacts in close proximity to each other can phase-lock into a single resonance over a frequency range from approximately <10 to >24 GHz for contact spacings of less than about ∼200 nm.
Patent
Microfluidic devices for high gradient magnetic separation
TL;DR: In this article, the magnetic microchannel is used to separate magnetic or magnetically-labeled target analytes from non-magnetic materials, and to sort materials according to their magnetic response.
Patent
Magnetoresistive random access memory with reduced switching field
TL;DR: In this article, a magnetoresistive tunneling junction memory cell (MNTJ) consisting of a pinned ferromagnetic region (17) having a magnetic moment vector (47) fixed in a preferred direction in the absence of an applied magnetic field was proposed.
Patent
Method of applying cladding material on conductive lines of MRAM devices
Jaynal A. Molla,John J. D'urso,Kelly Kyler,Bradley N. Engel,Gregory W. Grynkewich,N. D. Rizzo +5 more
TL;DR: In this article, the formation of a conductive bit line proximate to a magnetoresistive memory device is described. But the method of fabricating a cladding region for use in MRAM devices is different from ours.