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Johan Åkerman

Researcher at University of Gothenburg

Publications -  325
Citations -  11859

Johan Åkerman is an academic researcher from University of Gothenburg. The author has contributed to research in topics: Spin wave & Magnetic field. The author has an hindex of 48, co-authored 306 publications receiving 9814 citations. Previous affiliations of Johan Åkerman include University of California, Los Angeles & University of California, San Diego.

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A 4-Mb toggle MRAM based on a novel bit and switching method

TL;DR: In this paper, a 4Mb magnetoresistive random access memory (MRAM) with a novel magnetic bit cell and toggle switching mode is presented, which greatly improves the operational performance of the MRAM as compared to conventional MRAM.
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Toward a Universal Memory

TL;DR: The magnetoresistive random access memory (MRAM) as mentioned in this paper is a promising candidate for a universal memory that combines all the strengths and none of the weaknesses of the existing memory types.
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Direct observation of a propagating spin wave induced by spin-transfer torque

TL;DR: This work directly observes a propagating spin wave launched from a spin torque oscillator with a nanoscale electrical contact into an extended Permalloy (nickel iron) film through the spin transfer torque effect, and shows that spin waves with tunable frequencies can propagate for several micrometres.