The authors review the history, current status, physical mechanisms, experimental methods, and applications of nonlinear magneto-optical effects in atomic vapors. They begin by describing the pioneering work of Macaluso and Corbino over a century ago on linear magneto-optical effects (in which the properties of the medium do not depend on the light power) in the vicinity of atomic resonances. These effects are then contrasted with various nonlinear magneto-optical phenomena that have been studied both theoretically and experimentally since the late 1960s. In recent years, the field of nonlinear magneto-optics has experienced a revival of interest that has led to a number of developments, including the observation of ultranarrow (1-Hz) magneto-optical resonances, applications in sensitive magnetometry, nonlinear magneto-optical tomography, and the possibility of a search for parity- and time-reversal-invariance violation in atoms.

Resonant nonlinear magneto-optical effects in atoms

Electronic confinement at nanoscale dimensions remains a central means of science and technology. We demonstrate nanoscale lateral confinement of a quasi–two-dimensional electron gas at a lanthanum aluminate–strontium titanate interface. Control of this confinement using an atomic force microscope lithography technique enabled us to create tunnel junctions and field-effect transistors with characteristic dimensions as small as 2 nanometers. These electronic devices can be modified or erased without the need for complex lithographic procedures. Our on-demand nanoelectronics fabrication platform has the potential for widespread technological application.

http://absimage.aps.org/image/MAR09/MWS_MAR09-2008-000600.pdf

Oxide Nanoelectronics On Demand

HeNe ring-laser gyros are standard sensors in inertial guidance; mirror reflectances now reach 99.9999%. Present research instruments have an area of , a passive quality factor of , and a resolution of the frequency difference of counter-rotating optical beams approaching microhertz. In the Sagnac effect, this difference is proportional to the angular velocity. Present resolution is limited by thermal drifts in frequency pulling, itself reflecting mirror backscatter. The capability of ring lasers for measurements of geodesic interest, including seismometry and earth tides, and for detection of other sources of non-reciprocal refractive indices, including axions and CP violation, are discussed. In standard polarization geometries the observable is necessarily time-reversal odd. Scaling rules for dimensions, finesse etc summarizing past progress and suggesting future potential are given.

https://iopscience.iop.org/article/10.1088/0034-4885/60/6/001/pdf

Ring-laser tests of fundamental physics and geophysics

The spin-orbit interaction couples the electrons' motion to their spin. Accordingly, passing a current in a material with strong spin-orbit coupling generates a transverse spin current (spin Hall effect, SHE) and vice-versa (inverse spin Hall effect, ISHE). The emergence of SHE and ISHE as charge-to-spin interconversion mechanisms offers a variety of novel spintronics functionalities and devices, some of which do not require any ferromagnetic material. However, the interconversion efficiency of SHE and ISHE (spin Hall angle) is a bulk property that rarely exceeds ten percent, and does not take advantage of interfacial and low-dimensional effects otherwise ubiquitous in spintronics hetero- and mesostructures. Here, we make use of an interface-driven spin-orbit coupling mechanism - the Rashba effect - in the oxide two-dimensional electron system (2DES) LaAlO3/SrTiO3 to achieve spin-to-charge conversion with unprecedented efficiency. Through spin-pumping, we inject a spin current from a NiFe film into the oxide 2DES and detect the resulting charge current, which can be strongly modulated by a gate voltage. We discuss the amplitude of the effect and its gate dependence on the basis of the electronic structure of the 2DES.

Highly efficient and tuneable spin-to-charge conversion through Rashba coupling at oxide interfaces

The article illustrates recent experiments in which light is slowed, frozen, reversed, and stored in hot atomic vapors via electromagnetically induced transparency.

Slow, Ultraslow, Stored, and Frozen Light

Controlled thermal oxidations of thin copper films at relatively lower temperatures (up to 500°C) leading towards the formation of a single phase of copper oxide are investigated where the oxidation temperature, duration, oxygen partial pressure, film thickness and the crystallographic orientations play very crucial roles to significantly control the final phase of the copper oxide. Thin Cu films of thicknesses 100-1000 nm were deposited on glass and silicon substrates using the vacuum assisted thermal evaporation technique. Oxidations of those Cu films were performed at different temperatures for variable durations in air ambient as well as oxygen ambient conditions. Four probe resistivity measurement, x-ray diffraction (XRD), Raman spectroscopy, ultraviolet–visible (UV-Vis) spectroscopy, scanning electron microscopy (SEM) and x-ray photoemission spectroscopy (XPS) techniques have been used to characterize the oxide films. At a thermodynamic equilibrium, it has been observed that the oxide phase is solely determined by the oxidation temperature, however, the oxygen partial pressure can significantly alter this temperature range. In case of thermal oxidation in air, the initial oxidation of the copper films starts at about 150 °C, but a well ordered crystalline phase of the cuprous oxide (Cu2O) is observed only above 200 °C. However, the cupric oxide (CuO) phase starts to appear only above 320 °C. The details of the oxidation mechanism of the Cu film are explained with a probable schematic model in terms of thermal diffusion as well as the chemical reactivity.

Oxidation mechanism of thin Cu films: A gateway towards the formation of single oxide phase

Spin-conserving hopping transport through chains of localized states has been evidenced by taking benefit of the high degree of spin-polarization of CoFeB-MgO-CoFeB magnetic tunnel junctions. In particular, our data show that relatively thick MgO barriers doped with boron favor the activation of spin-conserving inelastic channels through a chain of three localized states and leading to reduced magnetoresistance effects. We propose an extension of the Glazman-Matveev theory to the case of ferromagnetic reservoirs to account for spin-polarized inelastic tunneling through nonmagnetic localized states embedded in an insulating barrier.

Spin-polarized inelastic tunneling through insulating barriers.

We have used a set of complementary experimental techniques to characterize an epitaxial structure (25 nm Fe)/GaAs(001) annealed at 450 °C under ultrahigh vacuum conditions. The solid state interdiffusion leads to the formation of an epitaxial reaction layer made of Fe2As patches embedded in a Ga rich Fe3Ga2−XAsX ternary phase. The epitaxial character of this layer explains how the usually reported epitaxial growth of Fe on GaAs performed in the temperature range of 175 to 225 °C is possible in spite of the species intermixing occurring at the interface. Moreover, the observed grains of Fe2As explain the decrease of magnetization at the interface in such contact, since Fe2As is an antiferromagnetic alloy.

Solid state interdiffusions in epitaxial Fe/GaAs(001) heterostructures during ultrahigh vacuum annealings up to 450 °C

The electronic band structure and the work function of MgO thin films epitaxially grown on Ag(001) have been investigated using x-ray and ultraviolet photoelectron spectroscopy for various oxide thicknesses. The deposition of thin MgO films on Ag(001) induces a strong diminution in the metal work function. The p-type Schottky barrier height is constant at 3.85+/-0.10 eV above two MgO monolayers and the experimental value of the ionization potential is 7.15+/-0.15 eV. Our results are well consistent with the description of the Schottky barrier height in terms of the Schottky-Mott model corrected by an MgO-induced polarization effect.

Bruno Lépine

Papers

Oxidation mechanism of thin Cu films: A gateway towards the formation of single oxide phase

Spin-polarized inelastic tunneling through insulating barriers.

Solid state interdiffusions in epitaxial Fe/GaAs(001) heterostructures during ultrahigh vacuum annealings up to 450 °C

Work function shifts, Schottky barrier height, and ionization potential determination of thin MgO films on Ag(001)

Photoelectron spectroscopy study of Ga 3d and As 3d core levels on MBE-grown GaAs surfaces