Pierre Seneor

TL;DR: The role of the metal-oxide interface in determining the spin polarization of electrons tunneling from or into ferromagnetic transition metals in magnetic tunnel junctions is reported and the results are ascribed to bonding effects at the transition metal-barrier interface.

TL;DR: In this paper, the metal/organic interface is found to be key for spin injection in organic semiconductors, and the authors investigated how to optimize the injection of spin into these materials.

TL;DR: A demonstration of the ability to transmit spin currents over distances of more than one hundred micrometres with an efficiency of up to 75% in graphene grown epitaxially on silicon carbide improves the prospects of graphene-based spintronic devices.

TL;DR: In this article, tunnel magnetoresistance (TMR) measurements on a half-metallic electrode were reported, showing that the choice of the insulating barrier can strongly influence and even reverse the spin polarization of tunneling electrons.

TL;DR: In this article, the authors review current challenges and perspectives in graphene spintronics, which is one of the most promising directions of innovation, given its room-temperature long-spin lifetimes and the ability of graphene to be easily interfaced with other classes of materials (ferromagnets, magnetic insulators, semiconductors, oxides, etc), allowing proximity effects to be harvested.