An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

An organic light emitting display apparatus that has high (or improved) contrast and/or impact resistance. The organic light emitting display apparatus includes: a substrate; an organic light emitting device on the substrate to display an image; a sealing member on the organic light emitting device; a semitransparent film on a surface of the sealing member facing away from the organic light emitting device to transmit a portion of external light and to reflect another portion of the external light; a passivation film on the semitransparent film to protect the semitransparent film; and a transmissive black layer between the sealing member and the organic light emitting device to increase contrast, wherein the semitransparent film has a refractive index greater than that of the passivation film.

Organic light emitting display apparatus

An organic light-emitting display includes a first substrate which includes a pixel region, and an encapsulation region which surrounds the pixel region, an organic light-emitting device which is located in the pixel region, a sealant which is located in the encapsulation region, and a dummy metal which is interposed between the first substrate and the sealant, where the encapsulation region includes a first encapsulation region and a second encapsulation region which is adjacent to the first encapsulation region, and the dummy metal is located in the first encapsulation region.

Organic light emitting display

An organic light-emitting diode (OLED) display is disclosed. In one aspect, the display includes a stretchable substrate, a thin film transistor (TFT) formed over the stretchable substrate and including a plurality of electrodes, an OLED electrically connected to the TFT and including a plurality of electrodes, and a plurality of interconnection lines connected to the electrodes of the OLED and the TFT. At least one of the interconnection lines is configured to move in a stretching direction and rotate an electrode selected from the electrodes of the OLED and the TFT connected to the at least one interconnection line.

Organic light-emitting diode display

In a display apparatus and a driving method thereof, a detector determines whether a timing controller is operated in a three-dimensional (3D) mode or a two-dimensional (2D) mode to output a first or second mode signal according to a result of the determination. A compensator compensates for a gamma value of a 3D image to be increased in response to a first mode signal when the 2D mode is converted to the 3D mode and decreases an increased gamma value to a gamma value for a 2D image in response to a second mode signal when the 3D mode is converted to the 2D mode.

Display apparatus and method of driving the same

An organic light emitting diode (OLED) display device and a method of fabricating the same are provided The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed The resultant capacitor has an increased surface area, and therefore, an increased capacitance

Organic light emitting diode display device and method of fabricating the same

A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same The method includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphous silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least one closed portion over the amorphous silicon layer, irradiating UV light toward the amorphous silicon layer and the mask using a UV lamp, depositing a crystallization-inducing metal on the amorphous silicon layer, and annealing the substrate to crystallize the amorphous silicon layer into a polycrystalline silicon layer This method and apparatus provide for controlling the seed position and grain size in the formation of a polycrystalline silicon layer

Method of forming polycrystalline silicon layer and atomic layer deposition apparatus used for the same

A thin film transistor includes: a substrate; a semiconductor layer disposed on the substrate, and including a channel region, source and drain regions, and edge regions having a first impurity formed at edges of the source and drain regions, and optionally, in the channel region; a gate insulating layer insulating the semiconductor layer; a gate electrode insulated from the semiconductor layer by the gate insulating layer; and source and drain electrodes electrically connected to the semiconductor layer.

Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the same

A thin film transistor that has improved characteristics and uniformity is developed by uniformly controlling low concentration of crystallization catalyst and controlling crystallization position so that no seed exists and no grain boundary exists, or one grain boundary exists in a channel layer of the thin film transistor. The thin film transistor includes a substrate; a semiconductor layer pattern which is formed on the substrate, the semiconductor layer pattern having a channel layer of which no seed exists and no grain boundary exists; a gate insulating film formed on the semiconductor layer pattern; and a gate electrode formed on the gate insulating film. A method for fabricating the thin film transistor includes forming an amorphous silicon layer on a substrate; forming a semiconductor layer pattern having a channel layer in which no seed exists and no grain boundary exists by crystallizing and patterning the amorphous silicon layer; forming a gate insulating film on the semiconductor layer pattern; and forming a gate electrode on the gate insulating film.

Thin film transistor and method for fabricating the same

An organic light emitting display and a fabricating method thereof in which an alignment mark is formed in the non-display region. The organic light emitting display includes a substrate having a display region and a non-display region; a buffer layer formed the overall substrate; a gate insulating layer; a gate electrode formed on the gate insulating layer corresponding to the active layer; an interlayer dielectric layer formed on the gate insulating layer; a source/drain electrode formed on the interlayer dielectric layer and electrically coupled to the active layer; an insulating layer formed on the source/drain electrode; and an organic light emitting diode formed on the insulating layer and electrically coupled to the source/drain electrode. Further, the organic light emitting display includes an alignment mark formed on one of the substrate and the buffer layer.

Byoung-Keon Park

Papers

Organic light emitting diode display device and method of fabricating the same

Method of forming polycrystalline silicon layer and atomic layer deposition apparatus used for the same

Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the same

Thin film transistor and method for fabricating the same

Organic light emitting display and fabricating method thereof