Ji-Su Ahn

TL;DR: A method of forming polycrystalline silicon layer and an atomic layer deposition apparatus used for the same is described in this paper, which includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphus silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least 1 closed portion over the ammorphous silicon layers, irradiating UV light toward the amomorphous silicon surface and the mask using a UV lamp, depositing a crystallization-inducing metal on the amogeneous silicon

TL;DR: In this paper, a thin film transistor (TFT) and an organic light emitting diode (OLED) display device having the TFT including a substrate, gate electrode disposed on the substrate, a gate insulating layer disposed on a gate electrode, a semiconductor layer disposing on the gate layer and crystallized using a metal catalyst, and source and drain electrodes disposed and electrically connected to the semiconductor layers.

TL;DR: In this paper, a thin-film transistor for an organic light emitting diode (LED) was proposed, where the gate electrode is located at the pixel portion and the gate interconnection is at the interconnection portion.

TL;DR: In this article, an atomic layer deposition apparatus includes a chamber, a vacuum pump to control a pressure in the chamber and a gas supply unit to supply a reaction gas into the chamber.

TL;DR: In this article, the impact of off-bias stress on the performance of thin film transistors (TFTs) fabricated on single crystalline silicon-on-glass substrates was studied.