Choi Bo Kyung

TL;DR: A method of forming polycrystalline silicon layer and an atomic layer deposition apparatus used for the same is described in this paper, which includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphus silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least 1 closed portion over the ammorphous silicon layers, irradiating UV light toward the amomorphous silicon surface and the mask using a UV lamp, depositing a crystallization-inducing metal on the amogeneous silicon

TL;DR: In this paper, a display device includes a substrate, a passivation layer on the substrate and including an area having a first thickness and an area with a second thickness less than the first thickness, and at least two sub-electrodes spaced apart from each other by a slit having two ends.

TL;DR: In this article, an atomic layer deposition apparatus includes a chamber, a vacuum pump to control a pressure in the chamber and a gas supply unit to supply a reaction gas into the chamber.

TL;DR: In this article, a method of forming a polycrystalline silicon layer includes forming an amorphous silicon layer on a substrate by chemical vapor deposition using a gas including a silicon atom and hydrogen gas.

TL;DR: In this paper, an amorphous silicon layer is formed on a buffer layer on a substrate and a catalyst metal layer is created on the amorphus to have a density of from about 10 11 to about 10 15 atom/cm 2.