Kil-won Lee

TL;DR: An organic light emitting diode (OLED) display device and a method of fabricating the same are provided in this article, where the OLED display device includes a substrate having a thin film transistor region and a capacitor region.

TL;DR: A method of forming polycrystalline silicon layer and an atomic layer deposition apparatus used for the same is described in this paper, which includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphus silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least 1 closed portion over the ammorphous silicon layers, irradiating UV light toward the amomorphous silicon surface and the mask using a UV lamp, depositing a crystallization-inducing metal on the amogeneous silicon

TL;DR: In this article, a method of fabricating a polycrystalline silicon layer includes: forming an amorphous silicon layer on a substrate, crystallizing the amorphus silicon layer into a poly-crystalized silicon layer using a crystallization-inducing metal; forming a metal layer pattern or metal silicide layer pattern in contact with an upper or lower region of the poly-crayon silicon layer corresponding to a region excluding a channel region in the polycrayone silicon layer; and annealing the substrate to getter the crystallizationinducing metal existing in

TL;DR: In this article, a thin-film transistor is defined as an organic light emitting diode (OLED) display device, which includes a substrate, a semiconductor layer disposed on the substrate, including a channel region and source and drain regions and crystallized using a metal catalyst.

TL;DR: In this paper, a thin-film transistor with a channel region, source and drain regions, and a body contact region is described, where the channel region is formed in an edge region of the semiconductor layer.