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Byron Lovell Williams
Researcher at Texas Instruments
Publications - 43
Citations - 660
Byron Lovell Williams is an academic researcher from Texas Instruments. The author has contributed to research in topics: Capacitor & Layer (electronics). The author has an hindex of 11, co-authored 43 publications receiving 654 citations.
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Patent
Microelectromechanical switch with fixed metal electrode/dielectric interface with a protective cap layer
TL;DR: In this article, a Micro Electro-Mechanical System (MEMS) switch with a bottom electrode (100) formed over a substrate (112) and a thin protective cap layer (130) disposed over the bottom electrode is described.
Patent
High Q-large tuning range micro-electro mechanical system (MEMS) varactor for broadband applications
TL;DR: A Micro Electro-Mechanical System (MEMS) varactor with a bottom electrode (116) formed over a substrate (112) and a dielectric material (130) disposed over the bottom electrode is shown in this article.
Journal ArticleDOI
RF CMOS on high-resistivity substrates for system-on-chip applications
Kamel Benaissa,J. Y. Yang,Darius L. Crenshaw,Byron Lovell Williams,Seetharaman Sridhar,J. Ai,Gianluca Boselli,Song Zhao,Shaoping Tang,Stan Ashburn,P. Madhani,T. Blythe,Nandakumar Mahalingam,Hisashi Shichijo +13 more
TL;DR: In this article, the impact of substrate resistivity on the key components of RF CMOS for system-on-chip (SoC) applications is discussed, including the transistor, transmission line, inductor, capacitor and varactor.
Patent
Selection of materials and dimensions for a micro-electromechanical switch for use in the RF regime
TL;DR: In this article, the authors presented an apparatus and method of selecting a unique combination of materials and dimensions for fabrication of a micro-electromechanical switch for improved RF switch performance.
Patent
Method to improve inductance with a high-permeability slotted plate core in an integrated circuit
TL;DR: In this paper, an inductor structure (102) formed in an integrated circuit (100) is disclosed, and includes a first isolation layer (106) and a first core plate (104) disposed over or within the first isolation layers (106, 114).