Random device mismatch plays an important role in the design of accurate analog circuits. Models for the matching of MOS and bipolar devices from open literature show that matching improves with increasing device area. As a result, accuracy requirements impose a minimal device area and this paper explores the impact of this constraint on the performance of general analog circuits. It results in a fixed bandwidth-accuracy-power tradeoff which is set by technology constants. This tradeoff is independent of bias point for bipolar circuits whereas for MOS circuits some bias point optimizations are possible. The performance limitations imposed by matching are compared to the limits imposed by thermal noise. For MOS circuits the power constraints due to matching are several orders of magnitude higher than for thermal noise. For the bipolar case the constraints due to noise and matching are of comparable order of magnitude. The impact of technology scaling on the conclusions of this work are briefly explored.

Device mismatch and tradeoffs in the design of analog circuits

The selection of drain current, inversion coefficient, and channel length for each MOS device in an analog circuit results in significant tradeoffs in performance. The selection of inversion coefficient, which is a numerical measure of MOS inversion, enables design freely in weak, moderate, and strong inversion and facilitates optimum design. Here, channel width required for layout is easily found and implicitly considered in performance expressions. This paper gives hand expressions motivated by the EKV MOS model and measured data for MOS device performance, inclusive of velocity saturation and other small-geometry effects. A simple spreadsheet tool is then used to predict MOS device performance and map this into complete circuit performance. Tradeoffs and optimization of performance are illustrated by the design of three, 0.18-mum CMOS operational transconductance amplifiers optimized for DC, balanced, and AC performance. Measured performance shows significant tradeoffs in voltage gain, output resistance, transconductance bandwidth, input-referred flicker noise and offset voltage, and layout area.

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Tradeoffs and Optimization in Analog CMOS Design

This paper presents the sizing rules method for basic building blocks in analog CMOS and bipolar circuit design. It consists of the development of a hierarchical library of transistor-pair groups as basic building blocks for analog CMOS and bipolar circuits, the derivation of a hierarchical generic list of constraints that must be satisfied to guarantee the function and robustness of each block, and the development of a reliable automatic recognition procedure of building blocks in a circuit schematic. Sizing rules efficiently capture design knowledge on the technology-specific level of transistor-pair groups. This reduces the effort and improves the resulting quality for analog circuit synthesis. Results of applications like circuit sizing, design centering, response surface modeling, or analog placement show the benefits of the sizing rules method.

The Sizing Rules Method for CMOS and Bipolar Analog Integrated Circuit Synthesis

A design methodology for low power MOS distributed amplifiers (DAs) is presented. The bias point of the MOS devices is optimized so that the DA can be used as a low-noise amplifier (LNA) in broadband applications. A prototype 9-mW LNA with programmable gain was implemented in a 0.18-/spl mu/m CMOS process. The LNA provides a flat gain, S/sub 21/, of 8 /spl plusmn/ 0.6dB from DC to 6.2 GHz, with an input impedance match, S/sub 11/, of -16 dB and an output impedance match, S/sub 22/, of -10 dB over the entire band. The 3-dB bandwidth of the distributed amplifier is 7GHz, the IIP3 is +3 dBm, and the noise figure ranges from 4.2 to 6.2 dB. The gain is programmable from -10 dB to +8 dB while gain flatness and matching are maintained.

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Low-power programmable gain CMOS distributed LNA

Operation of MOS devices in the strong, moderate, and weak inversion regions is considered. The advantages of designing the input differential stage of a CMOS op amp to operate in the weak or moderate inversion region are presented. These advantages include higher voltage gain, less distortion, and ease of compensation. Specific design guidelines are presented to optimize amplifier performance. Simulations that demonstrate the expected improvements are given.

Using the weak inversion region to optimize input stage design of CMOS op amps

A computer-aided design (CAD) methodology for optimizing MOS transistor current and sizing is presented where drain current ID, inversion level (represented by inversion coefficient IC), and channel length L are selected as three independent degrees of design freedom resulting in an optimized selection of channel width for layout. At a given drain current I/sub D/ in saturation, a selected MOS inversion coefficient IC and channel length L define a point on an operating plane illustrating dramatic tradeoffs in circuit performance. Operation in the region of low inversion coefficient IC and long channel length L results in optimal DC gain and matching compared to the region of high inversion coefficient IC and short channel length L where bandwidth is optimal. A design methodology is presented here to enable optimum design choices throughout the continuum of inversion level IC (weak, moderate, or strong inversion) and available channel length L. The methodology is implemented in a prototype CAD system where a graphical view permits the designer to explore optimum tradeoffs against preset goals for circuit transconductance g/sub m/, output conductance g/sub ds/, drain-source saturation voltage, gain, bandwidth, white and flicker noise, and DC matching for a 0.5-/spl mu/m CMOS process. The design methodology can be readily extended to deeper submicron MOS processes through linkage to the EKV or BSIM3 MOS models or custom model equations.

C.E. Hopper

Papers

A CAD methodology for optimizing transistor current and sizing in analog CMOS design