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C.L. Howe

Researcher at Vanderbilt University

Publications -  13
Citations -  289

C.L. Howe is an academic researcher from Vanderbilt University. The author has contributed to research in topics: Monte Carlo method & Ionization. The author has an hindex of 5, co-authored 13 publications receiving 282 citations. Previous affiliations of C.L. Howe include Goddard Space Flight Center.

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The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM

TL;DR: In this article, a Geant4-based Monte-Carlo transport code was used to simulate heavy ion irradiation using a SEU hardened SRAM and the results showed that materials external to the sensitive volume can affect the experimentally measured cross-section curve.
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Role of heavy-ion nuclear reactions in determining on-orbit single event error rates

TL;DR: In this paper, the authors show that neglecting ion-ion interaction processes (both particles having Z>1) results in an underestimation of the total on-orbit single event upset error rate by more than two orders of magnitude for certain technologies.
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Simulating Nuclear Events in a TCAD Model of a High-Density SEU Hardened SRAM Technology

TL;DR: In this article, nuclear reactions are integrated into the modeling of the SEU response of an SRAM cell using GEANT4-based simulations and the simulated transient response is compared to the response obtained using a typical heavy ion model that includes only direct ionization.
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Comparison of Measured Dark Current Distributions With Calculated Damage Energy Distributions in HgCdTe

TL;DR: In this paper, a combined Monte Carlo and analytic approach to the calculation of the pixel-to-pixel distribution of proton-induced damage in a HgCdTe sensor array and compares the results to measured dark current distributions after damage by 63 MeV protons.
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Distribution of Proton-Induced Transients in Silicon Focal Plane Arrays

TL;DR: In this article, Monte Carlo based simulations were used to analyze the effects of pile up (multiple hits on a single pixel during one integration time) and non-radiation-induced noise in the P-i-N focal plane array.