Nadim F. Haddad

TL;DR: In this article, a drift-diffusion collection at an NFET transistor in conjunction with parasitic bipolar conduction in nearby PFET transistors is shown to cause upsets in a commercial 0.25 /spl mu/m 10-T SEE hardened SRAM cell.

TL;DR: In this article, a Geant4-based Monte-Carlo transport code was used to simulate heavy ion irradiation using a SEU hardened SRAM and the results showed that materials external to the sensitive volume can affect the experimentally measured cross-section curve.

TL;DR: In this paper, a quantitative correlation is observed between the laser single-event upset and single event latchup threshold measurements and those performed using accelerator-based heavy ion testing methods, revealing the advantages of incorporating laser evaluation at an early stage into programs described for the development of radiation-hardened parts.

TL;DR: In this paper, Monte-Carlo simulations for several technologies have been used to predict the SEE response to irradiation in the absence of detailed information about the device geometry and fabrication process.

TL;DR: In this article, a well-collapse source-injection mechanism for SRAM SEU was demonstrated through TCAD modeling and the recovery of the SRAM's state was shown to be based upon the resistive path from the p+ -sources in SRAM to the well.