Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally-renowned authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model, and SiGe-base bipolar devices.

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Fundamentals of Modern VLSI Devices

The problems dealt with concern the production of electron‐hole pairs in a semiconductor exposed to high‐energy radiation. The goal is to develop a simple phenomenological model capable of describing the present experimental situation from the standpoint of yield, variance, and bandgap dependence. We proceed on the premise that e, the average amount of radiation energy consumed per pair, can be accounted for by a sum of three contributions: the intrinsic bandgap (EG), optical phonon losses r(ℏωR), and the residual kinetic energy (9/5) EG. The approach differs from prior treatments in the sense that the residual kinetic energy relates to a threshold for impact ionization taken to be 32EG in accordance with indications stemming from studies of avalanching in p‐n junctions. This model is subjected to three quantitative tests: (a) Fano‐factor variations are found to reflect the relative weight of phonon losses [K=r(ℏωR)/EG], but residual energy fluctuations govern the statistical behavior for K2 ≲0.3. An appl...

Bandgap Dependence and Related Features of Radiation Ionization Energies in Semiconductors

A theory for calculating the magnitude of majority carrier current flow in metal-semiconductor barriers is developed which incorporates Schottky's diffusion (D) theory and Bethe's thermionic emission (T) theory into a single T-D emission theory, and which includes the effects of the image force. A low electric field limit for application of this theory is estimated from consideration of phonon-induced backscattering near the potential energy maximum. A high electric field limit associated with the transition to T-F emission is estimated from calculations of the quantum-mechanical transmission of a Maxwellian distribution of electrons incident on the barrier. The theory predicts a wide range of electric field ≈ 2 × 10 2 to 4 × 10 5 V/cm over which the T-D theory may be applied to metal- n -type Si barriers at 300°K. The corresponding range for metal- n -type GaAs barriers is 9 × 10 3 to 8 × 10 4 V/ at 300°K. The decreased upper limit is due mainly to the smaller electron effective mass in GaAs, the increased lower limit to a small optical-phonon energy and a shorter electron-optical-phonon mean-free path. The theory predicts Richardson constants of 96 and 4.4 A/cm 2 /°K 2 for metal- n -type Si and metal- n -type GaAs barriers respectively. Experimental measurements on both metal-Si and metal-GaAs barriers are in general agreement with the theory. Values of the barrier n [( q / kT )(d V /d ln J )] appreciably greater than unity are predicted for the field-dependent barrier height which occurs when an interface layer of the order of atomic thickness exists between the metal and the semi-conductor. A field dependence of the barrier height is shown to have no first order effect on the derivative of the 1/ C 2 vs. V relationship for the barrier. The intercept of a 1/ C 2 vs. V plot is shown to yield the barrier height extrapolated linearly to zero field in the semiconductor. Experimental evidence for the existence of interface layers in near-ideal Schottky barriers is also presented.

Current transport in metal-semiconductor barriers

Monte Carlo simulations of electron transport in seven semiconductors of the diamond and zinc-blende structure (Ge, Si, GaAs, InP, AlAs, InAs, GaP) and some of their alloys (Al/sub x/Ga/sub 1-x/As, In/sub x/Ga/sub 1-x/As, Ga/sub x/In/sub 1-x/P) and hole transport in Si were performed at two lattice temperatures (77 and 300 K). The model uses band structures obtained from local empirical pseudopotential calculations and particle-lattice scattering rates computed from the Fermi golden rule to account for band-structure effects. Intervalley deformation potentials significantly lower than those which have been previously reported are needed to reproduce available experimental data. This is attributed to the more complicated band structures, particularly around the L- and X-symmetry points in most materials. Satisfactory agreement is obtained between Monte Carlo results and some experiments. >

Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. I. Homogeneous transport

ESD Phenomena and Test Methods The Physics of ESD Protection Circuit Elements Requirements and Synthesis of ESD Protection Circuits Design and Layout Requirements Analysis and Case Studies Modelling of ESD in Integrated Circuits Effects of Processing and Packaging.

ESD in silicon integrated circuits

Expressions for the temperature dependence of the carrier mean free path for optical phonon scattering and the mean energy loss per collision are presented which predict avalanche multiplication as a function of electric field for any operating temperature once the appropriate parameters have been determined at a single temperature. This has been verified for electrons in Si by the correlation of measurements at 300°K, 213°K, and 100°K. The temperature dependence of the breakdown voltages of a variety of abrupt and linear‐graded Si and Ge p‐n junctions has also been predicted. The fractional change in breakdown voltage with increasing temperature is predicted to decrease with increased doping concentration and, for the same breakdown voltage, to be less for linear‐graded junctions than for abrupt junctions.

C.R. Crowell

Papers

Temperature dependence of avalanche multiplication in semiconductors

Temperature dependence of avalanche multiplication in semiconductors

Theory of current transport in hot-electron transistors