C
C. Zeiner
Researcher at Vienna University of Technology
Publications - 12
Citations - 328
C. Zeiner is an academic researcher from Vienna University of Technology. The author has contributed to research in topics: Nanowire & Germanium. The author has an hindex of 9, co-authored 12 publications receiving 293 citations.
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Journal ArticleDOI
Tuning the Electro-optical Properties of Germanium Nanowires by Tensile Strain
TL;DR: Individual stressed NWs are recognized as an ideal platform for the exploration of strain-related electronic and optical effects and may contribute significantly to the realization of novel optoelectronic devices, strain-enhanced field-effect transistors (FETs), or highly sensitive strain gauges.
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Abrupt Schottky Junctions in Al/Ge Nanowire Heterostructures.
S. Kral,C. Zeiner,Michael Stöger-Pollach,Emmerich Bertagnolli,M. Den Hertog,Miguel López-Haro,Miguel López-Haro,Eric Robin,K. El Hajraoui,Alois Lugstein +9 more
TL;DR: Transmission electron microscopy (TEM) characterization has confirmed both the composition and crystalline nature of the pure Al nanowire segments and a monolithic Al/Ge/Al heterostructure was used to fabricate a novel impact ionization device.
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In Situ Transmission Electron Microscopy Analysis of Aluminum–Germanium Nanowire Solid-State Reaction
Khalil El Hajraoui,Khalil El Hajraoui,Eric Robin,C. Zeiner,Alois Lugstein,Stéphanie Kodjikian,Stéphanie Kodjikian,Jean-Luc Rouvière,Martien Den Hertog,Martien Den Hertog +9 more
TL;DR: This work presents a detailed in situ transmission electron microscopy (TEM) study of a very promising type of NW contact where aluminum metal enters the germanium semiconducting nanowire to form an extremely abrupt and clean axial metal–semiconductor interface.
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Multimode Silicon Nanowire Transistors
Sebastian Glassner,C. Zeiner,P. Periwal,P. Periwal,Thierry Baron,Thierry Baron,Emmerich Bertagnolli,Alois Lugstein +7 more
TL;DR: A multimode field effect transistors device using silicon nanowires that feature an axial n-type/intrinsic doping junction and a nonconventional tunneling transistor is realized, enabling an effective suppression of ambipolarity.
Journal ArticleDOI
Atypical self-activation of Ga dopant for Ge nanowire devices.
C. Zeiner,Alois Lugstein,T. Burchhart,Peter Pongratz,Justin G. Connell,Lincoln J. Lauhon,Emmerich Bertagnolli +6 more
TL;DR: Temperature dependent conductivity measurements show strong evidence for an in situ doping of the Ge-NWs without any further annealing, and the feasibility of improving the device performance of top-gated Ge- NW MOSFETs by FIB implantation was shown.