다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature. Even though research focusing on ZnO goes back many decades, the renewed interest is fueled by availability of high-quality substrates and reports of p-type conduction and ferromagnetic behavior when doped with transitions metals, both of which remain controversial. It is this renewed interest in ZnO which forms the basis of this review. As mentioned already, ZnO is not new to the semiconductor field, with studies of its lattice parameter dating back to 1935 by Bunn [Proc. Phys. Soc. London 47, 836 (1935)], studies of its vibrational properties with Raman scattering in 1966 by Damen et al. [Phys. Rev. 142, 570 (1966)], detailed optical studies in 1954 by Mollwo [Z. Angew. Phys. 6, 257 (1954)], and its growth by chemical-vapor transport in 1970 by Galli and Coker [Appl. Phys. ...

/pdf/a-comprehensive-review-of-zno-materials-and-devices-21a3zjadem.pdf

A comprehensive review of zno materials and devices

Two-photon excitation provides a means of activating chemical or physical processes with high spatial resolution in three dimensions and has made possible the development of three-dimensional fluorescence imaging, optical data storage, and lithographic microfabrication. These applications take advantage of the fact that the two-photon absorption probability depends quadratically on intensity, so under tight-focusing conditions, the absorption is confined at the focus to a volume of order λ3 (where λ is the laser wavelength). Any subsequent process, such as fluorescence or a photoinduced chemical reaction, is also localized in this small volume. Although three-dimensional data storage and microfabrication have been illustrated using two-photon-initiated polymerization of resins incorporating conventional ultraviolet-absorbing initiators, such photopolymer systems exhibit low photosensitivity as the initiators have small two-photon absorption cross-sections (δ). Consequently, this approach requires high laser power, and its widespread use remains impractical. Here we report on a class of π;-conjugated compounds that exhibit large δ (as high as 1, 250 × 10−50 cm4 s per photon) and enhanced two-photon sensitivity relative to ultraviolet initiators. Two-photon excitable resins based on these new initiators have been developed and used to demonstrate a scheme for three-dimensional data storage which permits fluorescent and refractive read-out, and the fabrication of three-dimensional micro-optical and micromechanical structures, including photonic-bandgap-type structures.

Two-photon polymerization initiators for three-dimensional optical data storage and microfabrication

We developed two-step solution-phase reactions to form hybrid materials of Mn3O4 nanoparticles on reduced graphene oxide (RGO) sheets for lithium ion battery applications. Mn3O4 nanoparticles grown selectively on RGO sheets over free particle growth in solution allowed for the electrically insulating Mn3O4 nanoparticles wired up to a current collector through the underlying conducting graphene network. The Mn3O4 nanoparticles formed on RGO show a high specific capacity up to ~900mAh/g near its theoretical capacity with good rate capability and cycling stability, owing to the intimate interactions between the graphene substrates and the Mn3O4 nanoparticles grown atop. The Mn3O4/RGO hybrid could be a promising candidate material for high-capacity, low-cost, and environmentally friendly anode for lithium ion batteries. Our growth-on-graphene approach should offer a new technique for design and synthesis of battery electrodes based on highly insulating materials.

Mn3O4-Graphene Hybrid as a High Capacity Anode Material for Lithium Ion Batteries

Design, and Applications Shutao Wang,†,‡ Kesong Liu, Xi Yao, and Lei Jiang*,†,‡,§ †Laboratory of Bio-inspired Smart Interface Science, Technical Institute of Physics and Chemistry, and ‡Beijing National Laboratory for Molecular Science, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China Key Laboratory of Bio-Inspired Smart Interfacial Science and Technology of Ministry of Education, School of Chemistry and Environment, BeiHang University, Beijing 100191, People’s Republic of China Department of Biomedical Sciences, City University of Hong Kong, Hong Kong P6903, People’s Republic of China

Bioinspired Surfaces with Superwettability: New Insight on Theory, Design, and Applications

We report on the high-temperature ferromagnetism in Co-doped ZnO films fabricated by the sol–gel method above 350 K. The lattice constant of c axis of wurtzite Zn1−xCoxO follows Vergard’s law for 0<x<0.25. For Zn1−xCoxO with x⩾0.25, a secondary phase is detected. The Zn1−xCoxO exhibits ferromagnetic behavior with a Curie temperature higher than 350 K. By the results of x-ray photoelectron spectroscopy measurement, we assume that Co occupied the Zn site without changing the wurtzite structure. In the case of x=0.2, the coercive field measured by a magnetization–magnetic field hysteresis curve at 350 K was nearly 80 Oe. Additionally, we investigated the electric structure through first-principles pseudopotential plane-wave calculation.

Study of diluted magnetic semiconductor: Co-doped ZnO

We report on the discovery of a room-temperature ferromagnetism in Cr-doped GaN single crystals with a Tc=280 K. The addition of Cr into GaN single crystals grown by the flux method induces the lattice constant increase due to the larger Cr atomic radius. In x-ray photoelectron spectroscopy measurement, Cr 2p3/2 core-level exhibited spectra near 575.7 eV. This binding energy is similar to the reported value of CrN. The coercive field by magnetization–magnetic field (M–H) hysteresis curve at 250 K was 54 Oe. We verified the presence of ferromagnetic transition in the temperature dependence of the electrical resistance measurements. We discuss the ferromagnetic ordering in Cr-doped GaN bulk single crystals excluding the contribution of the substrate crystal structure.

Room-temperature ferromagnetism in Cr-doped GaN single crystals

Copper electrodes with a micromesh/nanomesh structure were fabricated on a polyimide substrate using UV lithography and wet etching to produce flexible transparent conducting electrodes (TCEs). Well-defined mesh electrodes were realized through the use of high-quality Cu thin films. The films were fabricated using radio-frequency (RF) sputtering with a single-crystal Cu target—a simple but innovative approach that overcame the low oxidation resistance of ordinary Cu. Hybrid Cu mesh electrodes were fabricated by adding a capping layer of either ZnO or Al-doped ZnO. The sheet resistance and the transmittance of the electrode with an Al-doped ZnO capping layer were 6.197 ohm/sq and 90.657%, respectively and the figure of merit was 60.502 × 10–3/ohm, which remained relatively unchanged after thermal annealing at 200 °C and 1,000 cycles of bending. This fabrication technique enables the mass production of large-area flexible TCEs and the stability and high performance of Cu mesh hybrid electrodes in harsh environments suggests they have strong potential for application in smart displays and solar cells.

/pdf/cu-mesh-for-flexible-transparent-conductive-electrodes-1ifiiog7ho.pdf

Cu Mesh for Flexible Transparent Conductive Electrodes

It is well known that ZnO generally has the wurtzite structure. We report the growth of both hexagonal and cubic ZnO on Pt(111)/Ti/SiO2/Si substrate by a solution deposition. The wurtzite structure of ZnO film is enhanced up to the annealing temperature of 600 °C, and disappeared for annealing temperatures above 700 °C. The Pt(111)/Ti/SiO2/Si substrate is reoriented to hexagonal-Pt3Ti(004)/Ti/SiO2/Si when annealed at 700 °C and above due to the Ti out-diffusion and the ZnO thin film grown on the substrate has a cubic structure. The diffusion of Ti was evidenced by Auger electron spectroscopy measurements. From the photoluminescence measurement, the band gap of the wurtzite structure of ZnO film grown by the annealing below 600 °C was 3.37 eV, as is already known, but the cubic ZnO had a band gap of 3.28 eV, which suggests a zinc blende structure. The stability of the zinc blende structure on Zn2TiO4 layer was checked by the calculation of the lattice mismatch using the extended atomic distance mismatch mo...

Structural reconstruction of hexagonal to cubic ZnO films on Pt/Ti/SiO2/Si substrate by annealing

We have investigated experimentally the effects of n-type impurities such as Al and H on the magnetic properties of ZnCoO. The carrier density changes slightly upon the introduction of hydrogen but increases significantly in the case of Al. A measurement of magnetic circular dichroism indicates that, of the two impurities, only H induces ferromagnetism in ZnCoO. Our experimental data suggest that, unlike Al, H plays an important role in the enhancement of ferromagnetic spin-spin interactions that goes much beyond a carrier-mediated effect.

Chae-Ryong Cho

Papers

Study of diluted magnetic semiconductor: Co-doped ZnO

Room-temperature ferromagnetism in Cr-doped GaN single crystals

Cu Mesh for Flexible Transparent Conductive Electrodes

Structural reconstruction of hexagonal to cubic ZnO films on Pt/Ti/SiO2/Si substrate by annealing

Hydrogen-induced ferromagnetism in ZnCoO