Two layers of protection films are formed such that a sheet resistance at a portion directly below the protection film is higher than that at a portion directly below the protection film. The protection films are formed, for example, of SiN film, as insulating films. The protection film is formed to be higher, for instance, in hydrogen concentration than the protection film so that the protection film is higher in refractive index the protection film. The protection film is formed to cover a gate electrode and extend to the vicinity of the gate electrode on an electron supplying layer. The protection film is formed on the entire surface to cover the protection film. According to this configuration, the gate leakage is significantly reduced by a relatively simple configuration to realize a highly-reliable compound semiconductor device achieving high voltage operation, high withstand voltage, and high output.

Compound semiconductor device and method of manufacturing the same

Disclosed is a nitride semiconductor device, which has a semiconductor multilayer body (103) that includes a first nitride semiconductor layer (104) and a second nitride semiconductor layer (105) which are sequentially formed on a substrate (101). On the semiconductor multilayer body (103), a p-type third nitride semiconductor layer (108) is selectively formed, and on the third nitride semiconductor layer (108), a gate electrode (109) is formed. On the both sides of the third nitride semiconductor layer (108) on the semiconductor multilayer body (103), a first ohmic electrode (106) and a second ohmic electrode (107) are formed, respectively. The first gate electrode (109) is in Schottky-contact with the third nitride semiconductor (108).

Nitride semiconductor device and method for manufacturing same

In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific ON-resistance $R_{{\rm ON, SP}}$ (5.12 $\text{m}\Omega \cdot \textrm {cm}^{2}$ ), a low turn-ON voltage ( 1.9 kV) were simultaneously achieved in devices with a 25- $\mu \text{m}$ anode/cathode distance, resulting in a power figure-of-merit BV $^{2}$ / $R_{{\rm ON, SP}}$ of 727 $\textrm {MW}\,\cdot \, \textrm {cm}^{-2}$ . The record high BV of 1.9 kV is attributed to the dual field-plate structure.

/pdf/1-9-kv-algan-gan-lateral-schottky-barrier-diodes-on-silicon-4iup7zltlr.pdf

1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

https://iopscience.iop.org/article/10.7567/1347-4065/ab02e7/pdf

Recent development of vertical GaN power devices

In this letter, we demonstrate high-performance AlGaN/GaN Schottky barrier diodes (SBDs) on Si substrate with a recessed-anode structure for reduced turn-on voltage $V_{\mathrm {ON}}$ . The impact of the surface roughness after the recessed-anode formation on device characteristics is investigated. An improved surface condition can reduce the leakage current and enhance the breakdown voltage simultaneously. A low turn-on voltage of only 0.73 V can be obtained with a 50-nm recess depth. In addition, the different lengths of Schottky extension acting like a field plate are investigated. A high reverse breakdown voltage of 2070 V and a low specific ON-resistance of 3.8 $\text{m}\Omega \cdot \textrm {cm}^{2}$ yield an excellent Baliga’s figure of merit of 1127 MW/cm2, which can be attributed to the low surface roughness of only 0.6 nm and also a proper Schottky extension of 2 $\mu \text{m}$ to alleviate the peak electric field intensity in the SBDs.

2.07-kV AlGaN/GaN Schottky Barrier Diodes on Silicon With High Baliga’s Figure-of-Merit

We have demonstrated the lateral multifinger-type Schottky barrier diode (SBD) with bonding pad over active structure fabricated on the AlGaN/GaN heterostructure prepared on sapphire substrate. The fabricated GaN-SBD with size of 9 mm2 exhibited excellent device characteristics such as forward current of 4.5 A at 1.5 V, leakage current of 6 μA at 600 V, and high breakdown voltage of 747 V. The temperature variations of GaN-SBD for the reverse recovery characteristics are negligible and the value of reverse-recovery charge (Q)rr of GaN-SBD is one twentieth of Si-diode at 175°C.

AlGaN/GaN-Based Lateral-Type Schottky Barrier Diode With Very Low Reverse Recovery Charge at High Temperature

A crack-free AlGaN/GaN heterostrucure is grown on 4-in Si (111) substrate with AlSiC precoverage layer. Covering the Si surface with the AlSiC layer, until the growth of the AlN wetting buffer layer, is found to be effective in compensating the strong tensile stress in the GaN layer grown on Si substrate. The metal-oxide-semiconductor field-effect transistor, fabricated on this AlGaN/GaN heterostructure, exhibits excellent normally-off characteristics with threshold voltage of 7.2 V, maximum drain current of 120 mA/mm, ON/OFF current ratio of ~ 108, and subthreshold slope of 80 mV/decade.

Performance of Fully Recessed AlGaN/GaN MOSFET Prepared on GaN Buffer Layer Grown With AlSiC Precoverage on Silicon Substrate

A high electron mobility transistor (HEMT) device includes a buffer layer on a substrate; a face-inversion layer on a part of the buffer layer; a plurality of semiconductor layers on the face-inversion layer and on the buffer layer; and a source electrode, a drain electrode, and a gate electrode on the plurality of semiconductor layers. The HMT device has a stable, normally Off characteristic.

High electron mobility transistor device

Hetero junction field effect transistors and methods of fabricating such transistors are disclosed wherein: a first compound semiconductor layer is provided on a substrate; a second compound semiconductor layer is provided on the first compound semiconductor layer; a gate insulating layer is provided on the second compound semiconductor layer; and a gate electrode is provided on the gate insulating layer such that the gate insulating layer penetrates the second compound semiconductor layer so as to be in contact with the first compound semiconductor layer.

Hetero junction field effect transistor and method for manufacturing the same

A semiconductor power device includes a substrate, a plurality of gate electrode structures, a floating well region and a termination ring region. The substrate has a first region and a second region. A plurality of gate electrode structures is formed on the substrate, each of the gate electrode structures extends from the first region to the second region and includes a first gate electrode, a second gate electrode and a connecting portion, the first and second gate electrodes extend in a first direction, and the connecting portion connects end portions of the first and second gate electrodes to each other. The floating well region is doped with impurities between the gate electrode structures in the first region of the substrate, and the floating well region has a first impurity concentration and a first depth. The termination ring region is doped with impurities in the second region of the substrate, is spaced apart from the gate electrode structures, and has a ring shape surrounding the first region, and has the first impurity concentration and the first depth. The semiconductor power device may have a high breakdown voltage.

Chan-ho Park

Papers

AlGaN/GaN-Based Lateral-Type Schottky Barrier Diode With Very Low Reverse Recovery Charge at High Temperature

Performance of Fully Recessed AlGaN/GaN MOSFET Prepared on GaN Buffer Layer Grown With AlSiC Precoverage on Silicon Substrate

High electron mobility transistor device

Hetero junction field effect transistor and method for manufacturing the same

Semiconductor power devices and methods of manufacturing the same