C
Chen-Jen Hung
Researcher at Missouri University of Science and Technology
Publications - 10
Citations - 578
Chen-Jen Hung is an academic researcher from Missouri University of Science and Technology. The author has contributed to research in topics: Oxide & Copper. The author has an hindex of 8, co-authored 10 publications receiving 561 citations. Previous affiliations of Chen-Jen Hung include The Graduate Center, CUNY.
Papers
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Journal ArticleDOI
Electrochemical self-assembly of copper/cuprous oxide layered nanostructures
Jay A. Switzer,Chen-Jen Hung,Ling-Yuang Huang,Eric R. Switzer,Daniel R. Kammler,Teresa D. Golden,Eric W. Bohannan +6 more
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An Electrochemical Method for CuO Thin Film Deposition from Aqueous Solution
TL;DR: In this paper, an electrochemical procedure was described for the anodic deposition of CuO thin films from solution precursors at 25-30°C in an alkaline medium (pH > 13).
Journal ArticleDOI
Potential oscillations during the electrochemical self-assembly of copper/cuprous oxide layered nanostructures
Jay A. Switzer,Chen-Jen Hung,Ling-Yuang Huang,F. Scott Miller,Yanchun Zhou,Eric R. Raub,Mark G. Shumsky,Eric W. Bohannan +7 more
TL;DR: In this paper, the phase composition and resistivity of the films can be controlled by varying the applied current density, and the resistivity can be varied over ten orders of magnitude.
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Electrodeposited Defect Chemistry Superlattices
Jay A. Switzer,Chen-Jen Hung,Bryan E. Breyfogle,Mark G. Shumsky,Robert A. Van Leeuwen,Teresa D. Golden +5 more
TL;DR: Nanometer-scale layered structures based on thallium(III) oxide were electrodeposited in a beaker at room temperature by pulsing the applied potential during deposition, finding that the epitaxial structures have the high carrier density and low electronic dimensionality of high transition temperature superconductors.
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Optical and Electronic Transport Properties of Electrodeposited Thallium(III) Oxide Films
TL;DR: In this paper, specular reflectance spectroscopy and four-point resistivity and Hall measurements were used to determine the optical and electrical properties of thin n-type semiconductors.