Showing papers by "Chenming Hu published in 1981"
01 Dec 1981
TL;DR: In this paper, a simplified and efficient method to account for two-dimensional effects on the electric field in the pinched-off region near to the drain of a MOSFET is shown to provide accurate predictions of the drain, gate and substrate currents.
Abstract: A simplified and efficient method to account for two-dimensional effects on the electric field in the pinched-off region near to the drain of a MOSFET is shown to provide accurate predictions of the drain, gate and substrate currents, Measurements agree well with theory for a wide range of processing parameters and geometries.
99 citations
01 Dec 1981
TL;DR: In this article, a mathematical model based on trap filling and trap generation is proposed and the capture cross-sections, trap generation rates, the centroids, and the densities of the pre-existing and generated traps are determined as functions of the current density.
Abstract: Constant current stress and C-V techniques have been used to study the electron trapping phenomenon in thermally grown thin SiO 2 films A mathematical model based on trap filling and trap generation is proposed and the capture cross-sections, trap generation rates, the centroids, and the densities of the pre-existing and generated traps are determined as functions of the current density. The generation of interface states is also characterized.
80 citations
TL;DR: Arsenic implanted layers in 〈100〉 silicon are annealed using a cw Xe arc lamp, and the layers, made amorphous by the implantation, crystallize with the same orientation as the substrate.
Abstract: Arsenic implanted layers in 〈100〉 silicon are annealed using a cw Xe arc lamp. The layers, made amorphous by the implantation, crystallize with the same orientation as the substrate. The crystallization appears to follow the solid‐phase epitaxial growth model. Approximately 67% of the dopant is activated in the Xe‐lamp‐annealed samples, compared to ∼80% in samples annealed at 900 °C for 30 min.
18 citations
TL;DR: In this paper, the dopant and trap density profiles in MOSFETs can be deduced from the static and transient variations of VT caused by changes in VBS.
Abstract: The dopant and trap density profiles in MOSFETs can be deduced from the static and transient variations of VT caused by changes in VBS. This letter reports a study of errors in VT measurements by three different methods. Relatively small errors in VT could cause serious inaccuracies in dopant profiles. It is found that the major source of errors is the non-constancy of the surface mobility and that errors in VT measured by a “constant VGS−VDS method” cannot be eliminated easily. However, with properly chosen VGS−VT or ID, a “constant ID−VDS method” can provide almost error-free measurements of VT. The theoretical predictions agree with experiments.
11 citations