Chih-Hung Yen

TL;DR: In this article, the temperature-dependent characteristics of an n+-InGaAs/n-GaAs composite doped channel (CDC) heterostructure field effect transistor (HFET) have been studied.

TL;DR: In this article, the influence of (NH/sub 4/)/sub 2/S/sub x/ treatment on an AlGaAs/InGaA/GaAs pseudomorphic high electron mobility transistor (PHEMT) is studied and demonstrated.

TL;DR: An interesting AlGaInP multiple-quantum-well light-emitting diode (LED) with a direct ohmic contact structure, formed by an indium-tinoxide (ITO) transparent film and AuBe diffused thin layer, is fabricated and studied as mentioned in this paper.

TL;DR: GaN-based light-emitting diodes (LEDs) grown on c-plane vicinal sapphire substrates are fabricated and characterized and the extremely enhanced output power is primarily caused by the formation of indium quantum dots in MQW which provides an increased quantum efficiency.

TL;DR: In this article, the temperature-dependent DC characteristics of InGaP-GaAs heterojunction bipolar transistors with and without sulfur treatment are systematically studied and demonstrated, and it is shown that with the use of sulfur passivation, the series resistance of base-emitter junction of the studied device can be effectively reduced.