Disclosed herein is a computer-implemented defect prediction method for a device manufacturing process involving processing a portion of a design layout onto a substrate, the method comprising: identifying a hot spot from the portion of the design layout; determining a range of values of a processing parameter of the device manufacturing process for the hot spot, wherein when the processing parameter has a value outside the range, a defect is produced from the hot spot with the device manufacturing process; determining an actual value of the processing parameter; determining or predicting, using the actual value, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the hot spot with the device manufacturing process.

Computational wafer inspection

A segmented mask includes a set of cell structures, wherein each cell structure includes a set of features having an unresolvable segmentation pitch along a first direction, wherein the unresolvable segmentation pitch along the first direction is smaller than the illumination of the lithography printing tool, wherein the plurality of cell structures have a pitch along a second direction perpendicular to the first direction, wherein the unresolvable segmentation pitch is suitable for generating a printed pattern for shifting the best focus position of the lithography tool by a selected amount to achieve a selected level of focus sensitivity.

Method and system for providing a target design displaying high sensitivity to scanner focus change

Disclosed herein is a computer-implemented defect prediction method for a device manufacturing process involving processing a pattern onto a substrate, the method comprising: identifying a processing window limiting pattern (PWLP) from the pattern; determining a processing parameter under which the PWLP is processed; and determining or predicting, using the processing parameter, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the PWLP with the device manufacturing process.

Process window optimizer

A method for determining a registration error of a feature on a mask, including providing a first aerial image that was captured by means of a position measuring device and includes at least the feature, simulating, from pattern specifications of the mask, a second aerial image that includes at least the feature, taking into account at least one effect that causes distortion of the first aerial image, and determining the registration error of the feature as the distance of the position of the feature in the first aerial image from the position of the feature in the second aerial image. Also provided is a method for simulating an aerial image from pattern specifications of a mask and a position measuring device for carrying out the method.

Method For Determining The Registration Of A Structure On A Photomask And Apparatus To Perform The Method

Metrology targets, target design methods and metrology methods are provided. Metrology targets comprise target elements belonging to two or more target element types. Each target element type comprises unresolved features which offset specified production parameters to a specified extent and thus provide sensitivity monitoring and optimization tools for process parameters such as focus and dose.

Target element types for process parameter metrology

The invention relates to a mask inspection method that can be used for the design and production of masks, in order to detect relevant weak points early on and to correct the same. According to said method for mask inspection, an aerial image simulation, preferably an all-over aerial image simulation, is carried out on the basis of the mask design converted into a mask layout, in order to determine a list of hot spots. The mask/test mask is analysed by means of an AIMS tool, whereby real aerial images are produced and compared with the simulated aerial images. The determined differences between the aerial images are used to improve the mask design. The inventive arrangement enables a method to be carried out for mask inspection for mask design and mask production. The use of the AIMS tool directly in the mask production process essentially accelerates the mask production, while reducing the error rate and cost.

Method for mask inspection for mask design and mask production

An aerial image simulation is carried out of the mask design to produce a list of critical points or hotspots. Using this list the mask or test mask is analyzed using an Aerial Imaging Measurement System (AIMS) tool, whereby real aerial images are compared to simulate aerial images. The differences are used to improve the mask design.

Process to inspect masks for weak spots uses aerial image simulation to produce a list of critical points or hotspots, which is analyzed using Aerial Imaging Measurement system to compare real with simulated images

Material for forming resist protective film and resist pattern forming method using the same

Die vorliegende Erfindung betrifft ein Verfahren zur Maskeninspektion, welches im Rahmen des Maskendesigns der Maskenherstellung eingesetzt werden kann, um relevante Schwachstellen bereits fruhzeitig erkennen und korrigieren zu konnen. Bei dem Verfahren zur Maskeninspektion wird von dem entworfenen und in ein Maskenlayout uberfuhrten Maskendesign eine „aerial image' Simulation, vorzugsweise eine vollflachige „aerial image'-Simulation durchgefuhrt, um daraus eine Liste der kritischen Stellen (Hotspots) zu ermitteln. Anhand dieser Hot-spots wird die Maske/Testmaske mit Hilfe eines AIMS-Tools analysiert, indem reale „aerial images' erzeugt und mit den simulierten „aerial images' verglichen werden. Die ermittelten Unterschiede der „aerial images' werden zur Verbesserung des Maskendesigns verwendet. Mit der erfindungsgemasen Anordnung wird ein Verfahren zur Maskeninspektion im Rahmen des Maskendesigns und der Maskenherstellung zur Verfugung gestellt. Durch die Verwendung des AIMS-Tools direkt im Maskenherstellungsprozess ist eine wesentliche Beschleunigung der Maskenherstellung, bei Verringerung der Fehlerquote und Kosteneinsparung moglich.

Christian Dr. Kalus

Papers

Method for mask inspection for mask design and mask production

Process to inspect masks for weak spots uses aerial image simulation to produce a list of critical points or hotspots, which is analyzed using Aerial Imaging Measurement system to compare real with simulated images

Material for forming resist protective film and resist pattern forming method using the same

Verfahren zur Maskeninspektion im Rahmen des Maskendesigns und der Maskenherstellung