scispace - formally typeset
Patent

Method for mask inspection for mask design and mask production

Reads0
Chats0
TLDR
In this article, the authors proposed a mask inspection method that can be used for the design and production of masks, in order to detect relevant weak points early on and to correct the same.
Abstract
The invention relates to a mask inspection method that can be used for the design and production of masks, in order to detect relevant weak points early on and to correct the same. According to said method for mask inspection, an aerial image simulation, preferably an all-over aerial image simulation, is carried out on the basis of the mask design converted into a mask layout, in order to determine a list of hot spots. The mask/test mask is analysed by means of an AIMS tool, whereby real aerial images are produced and compared with the simulated aerial images. The determined differences between the aerial images are used to improve the mask design. The inventive arrangement enables a method to be carried out for mask inspection for mask design and mask production. The use of the AIMS tool directly in the mask production process essentially accelerates the mask production, while reducing the error rate and cost.

read more

Citations
More filters
Patent

Computational wafer inspection

TL;DR: In this article, a computer-implemented defect prediction method for a device manufacturing process involving processing a portion of a design layout onto a substrate is presented, the method comprising: identifying a hot spot from the portion of the design layout; determining a range of values of a processing parameter of the device manufacturing processes for the hot spot; determining an actual value of the processing parameter; determining or predicting, using the actual value, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the hot spots with the devicemanufacturing process.
Patent

Method and system for providing a target design displaying high sensitivity to scanner focus change

TL;DR: A segmented mask includes a set of cell structures, wherein each cell structure includes features having an unresolvable segmentation pitch along a first direction as mentioned in this paper, where the resolvable pitch along the first direction is smaller than the illumination of the lithography printing tool.
Patent

Process window optimizer

TL;DR: In this paper, a computer-implemented defect prediction method for a device manufacturing process involving processing a pattern onto a substrate, the method comprising: identifying a processing window limiting pattern (PWLP) from the pattern; determining a processing parameter under which the PWLP is processed; and determining or predicting, using the processing parameter, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the PWLP with the device manufacturing processes.
Patent

Method For Determining The Registration Of A Structure On A Photomask And Apparatus To Perform The Method

TL;DR: In this paper, a method for determining registration error of a feature on a mask, including providing a first aerial image that was captured by means of a position measuring device and including at least the feature, simulating, from pattern specifications of the mask, a second aerial image, taking into account at least one effect that causes distortion of the first image, was presented.
Patent

Target element types for process parameter metrology

TL;DR: In this paper, the authors provide sensitivity monitoring and optimization tools for process parameters such as focus and dose, and provide target elements consisting of unresolved features which offset specified production parameters to a specified extent.
References
More filters
Patent

Phase shift masking for complex patterns with proximity adjustments

TL;DR: In this paper, techniques for extending the use of phase shift techniques to implementation of masks used for complex layouts in the layers of integrated circuits, beyond selected critical dimension features, are presented.
Patent

Visual inspection and verification system

TL;DR: In this paper, a method and apparatus for inspecting a photolithography mask for defects is provided, which consists of providing a defect area image to an image simulator wherein the defect image is an image of a portion of a photochemical mask, and providing a set of lithography parameters as a second input to the image simulator.
Patent

System and method for excluding extraneous features from inspection operations performed by a machine vision inspection system

TL;DR: In this paper, a video tool region of interest provided by a user interface of the vision system can encompass both the feature to be inspected and the extraneous features, making the video tool easy to use.
Patent

Qualifying patterns, patterning processes, or patterning apparatus in the fabrication of microlithographic patterns

TL;DR: In this article, aerial images of a reticle for different values of a member of a set of lithographic variables are provided. And the reticle is most susceptible to failure based on the results of the comparison.
Patent

Method for reticle inspection using aerial imaging

TL;DR: In this article, a reticle inspection system for inspecting reticles can be used as an incoming inspection tool, and as a periodic and pre-exposure inspection tool for mask shops.
Related Papers (5)