C
Christian Hagendorf
Researcher at Fraunhofer Society
Publications - 126
Citations - 2809
Christian Hagendorf is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Silicon & Potential induced degradation. The author has an hindex of 24, co-authored 106 publications receiving 2079 citations. Previous affiliations of Christian Hagendorf include Martin Luther University of Halle-Wittenberg.
Papers
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Journal ArticleDOI
Explanation of potential-induced degradation of the shunting type by Na decoration of stacking faults in Si solar cells
Volker Naumann,Dominik Lausch,Angelika Hähnel,J. Bauer,Otwin Breitenstein,Andreas Graff,Martina Werner,S. Swatek,Stephan Großer,Jörg Bagdahn,Christian Hagendorf +10 more
TL;DR: In this article, a model for the shunting mechanism in PID-s affected solar cells is developed and the results of different shunting mechanisms are discussed with respect to different shunt mechanisms.
Journal ArticleDOI
Techno-Economic Assessment of Soiling Losses and Mitigation Strategies for Solar Power Generation
Klemens Ilse,Leonardo Micheli,Benjamin Figgis,Katja Lange,David Daßler,Hamed Hanifi,Fabian Wolfertstetter,Volker Naumann,Christian Hagendorf,Ralph Gottschalg,Jörg Bagdahn +10 more
TL;DR: In this article, the importance of soiling is assessed for the global PV and concentrated solar power systems key markets, and a technoeconomic assessment of current and proposed soiling mitigation strategies such as innovative coating materials is discussed.
Journal ArticleDOI
Fundamentals of soiling processes on photovoltaic modules
Klemens Ilse,Benjamin Figgis,Benjamin Figgis,Volker Naumann,Christian Hagendorf,Jörg Bagdahn +5 more
TL;DR: In this paper, a detailed overview of macroscopic and microscopic factors influencing soiling is provided, including a global analysis of key parameters including airborne dust concentrations, dust characteristics (mineral composition, size distribution), and particle deposition rates.
Journal ArticleDOI
On the mechanism of potential-induced degradation in crystalline silicon solar cells
TL;DR: In this article, electron-beam-induced current measurements correlate with the sodium distribution in the nitride layer close to the Si surface imaged by time-of-flight secondary ion mass spectroscopy.
Journal ArticleDOI
Potential-Induced Degradation (PID): Introduction of a Novel Test Approach and Explanation of Increased Depletion Region Recombination
Dominik Lausch,Volker Naumann,Otwin Breitenstein,J. Bauer,Andreas Graff,J. Bagdahn,Christian Hagendorf +6 more
TL;DR: In this article, the authors introduced a potential-induced degradation (PID) test at a solar-cell level and for individual module components applicable as a tool for process control in industries and root cause analyses in science departments.