Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers1. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H)2,3,4,5 and organic semiconductors2,6,7,8,9,10 have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm2 V-1 s-1, which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6–9 cm2 V-1 s-1, and device characteristics are stable during repetitive bending of the TTFT sheet.

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

Research in the use of organic polymers as the active semiconductors in light-emitting diodes has advanced rapidly, and prototype devices now meet realistic specifications for applications. These achievements have provided insight into many aspects of the background science, from design and synthesis of materials, through materials fabrication issues, to the semiconductor physics of these polymers.

Electroluminescence in conjugated polymers

Organic electronics are beginning to make significant inroads into the commercial world, and if the field continues to progress at its current, rapid pace, electronics based on organic thin-film materials will soon become a mainstay of our technological existence. Already products based on active thin-film organic devices are in the market place, most notably the displays of several mobile electronic appliances. Yet the future holds even greater promise for this technology, with an entirely new generation of ultralow-cost, lightweight and even flexible electronic devices in the offing, which will perform functions traditionally accomplished using much more expensive components based on conventional semiconductor materials such as silicon.

The path to ubiquitous and low-cost organic electronic appliances on plastic

Organic thin-film transistors (OTFTs) have lived to see great improvements in recent years. This review presents new insight into conduction mechanisms and performance characteristics, as well as opportunities for modeling properties of OTFTs. The shifted focus in research from novel chemical structures to fabrication technologies that optimize morphology and structural order is underscored by chapters on vacuum-deposited and solution-processed organic semiconducting films. Finally, progress in the growing field of the n-type OTFTs is discussed in ample detail. The Figure, showing a pentacene film edge on SiO2, illustrates the morphology issue.

Organic Thin Film Transistors for Large Area Electronics

Self-organization in many solution-processed, semiconducting conjugated polymers results in complex microstructures, in which ordered microcrystalline domains are embedded in an amorphous matrix1. This has important consequences for electrical properties of these materials: charge transport is usually limited by the most difficult hopping processes and is therefore dominated by the disordered matrix, resulting in low charge-carrier mobilities2 (⩽10-5 cm2 V-1 s-1). Here we use thin-film, field-effect transistor structures to probe the transport properties of the ordered microcrystalline domains in the conjugated polymer poly(3-hexylthiophene), P3HT. Self-organization in P3HT results in a lamella structure with two-dimensional conjugated sheets formed by interchain stacking. We find that, depending on processing conditions, the lamellae can adopt two different orientations—parallel and normal to the substrate—the mobilities of which differ by more than a factor of 100, and can reach values as high as 0.1 cm2 V-1 s-1 (refs 3, 4). Optical spectroscopy of the field-induced charge, combined with the mobility anisotropy, reveals the two-dimensional interchain character of the polaronic charge carriers, which exhibit lower relaxation energies than the corresponding radical cations on isolated one-dimensional chains. The possibility of achieving high mobilities via two-dimensional transport in self-organized conjugated lamellae is important for applications of polymer transistors in logic circuits5 and active-matrix displays4,6.

Two-dimensional charge transport in self-organized, high-mobility conjugated polymers

A technology has been developed to make all polymer integrated circuits. It involves reproducible fabrication of field-effect transistors in which the semiconducting, conducting and insulating parts are all made of polymers. The fabrication on flexible substrates uses spin-coating of electrically active precursors and patternwise exposure of the deposited films. In the whole process stack integrity is maintained. Vertical interconnects are made mechanically. As a demonstrator functional 15-bit programmable code generators are fabricated. These circuits still operate when the foils are sharply bent. Due to the limited number of process steps the technology is potentially inexpensive.

Low-cost all-polymer integrated circuits

The handling of grey levels by these large displays paves the way for electronic paper. The main advantages of using soluble semiconductive polymers in microelectronic devices are ease of processing1,2,3 and mechanical flexibility4. Here we describe an active-matrix display with 64 × 64 pixels, each driven by a thin-film transistor with a solution-processed polymer semiconductor. In a significant step towards low-cost flexible displays, this polymer-dispersed liquid-crystal arrangement gives a reflective, low-power display with paper-like contrast, which can handle 256 grey levels while being refreshed at video speed.

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Plastic transistors in active-matrix displays

Metal-insulator-semiconductor field-effect transistors have been fabricated from polymer semiconductors that can be processed from solution. The performance of these transistors is sufficient to allow the construction of simple logic gates that display voltage amplification. Successful coupling of these gates into ring oscillators demonstrates that these logic gates can switch subsequent gates and perform logic operations. The ability to perform logic operations is an essential requirement for the use of polymer-based transistors in low-cost low-end data storage applications.

https://science.sciencemag.org/content/sci/270/5238/972.full.pdf

Logic Gates Made from Polymer Transistors and Their Use in Ring Oscillators

Multicollector transistors fed by carrier injection are used. A simplified (five masks) standard bipolar process is used resulting in a packing density of 400 gates/mm/SUP 2/ with interconnection widths and spacings of 5 /spl mu/m. The power-delay time product is 0.4 pJ per gate. An additional advantage is a very low supply voltage (less than 1 V). This, combined with the possibility of choosing the current level within several decades enables use in very low-power applications. With a normal seven-mask technology, analog circuitry has been combined with integrated injection logic (I/SUP 2/L).

Cornelis Maria Hart

Papers

Low-cost all-polymer integrated circuits

Plastic transistors in active-matrix displays

Logic Gates Made from Polymer Transistors and Their Use in Ring Oscillators

Integrated injection logic: a new approach to LSI

Active‐Matrix Displays Driven by Solution‐Processed Polymeric Transistors