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Gerwin H. Gelinck

Researcher at Eindhoven University of Technology

Publications -  286
Citations -  12951

Gerwin H. Gelinck is an academic researcher from Eindhoven University of Technology. The author has contributed to research in topics: Thin-film transistor & Transistor. The author has an hindex of 47, co-authored 275 publications receiving 11762 citations. Previous affiliations of Gerwin H. Gelinck include Netherlands Organisation for Applied Scientific Research & Delft University of Technology.

Papers
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Flexible active-matrix displays and shift registers based on solution-processed organic transistors.

TL;DR: Flexible active-matrix monochrome electrophoretic displays based on solution-processed organic transistors on 25-μm-thick polyimide substrates based on 1,888 transistors are demonstrated, which are the largest organic integrated circuits reported to date.
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High-performance solution-processed polymer ferroelectric field-effect transistors

TL;DR: In this paper, a non-volatile memory device with flexible plastic active layers deposited from solution is presented, and the memory device is a ferroelectric field effect transistor (FeFET) made with a Ferroelectric fluoropolymer and a bisalkoxy-substituted poly(pphenylene vinylene) semiconductor material.
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Organic transistors in optical displays and microelectronic applications

TL;DR: The application of organic transistors in the fields of flexible optical displays and microelectronics is reviewed with primary emphasis on the latest developments in the area of active-matrix electrophoretic and organic light-emitting diode displays based on OTFT backplanes.
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High-performance all-polymer integrated circuits

TL;DR: In this paper, the integration of all-polymer field effect transistors in fully functional integrated circuits with operating frequencies of several kHz was demonstrated by a 15 bit code generator circuit using several hundreds of devices.
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Reconfigurable Complementary Logic Circuits with Ambipolar Organic Transistors.

TL;DR: High-performance non-planar ambipolar organic transistors with electrical control of the polarity and orders of magnitude higher performances with respect to state-of-art split-gate ambipolar transistors are shown.