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Craig S. Lent

Researcher at University of Notre Dame

Publications -  179
Citations -  15306

Craig S. Lent is an academic researcher from University of Notre Dame. The author has contributed to research in topics: Quantum dot cellular automaton & Quantum cellular automaton. The author has an hindex of 54, co-authored 178 publications receiving 14153 citations. Previous affiliations of Craig S. Lent include Arizona State University & University of Minnesota.

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Signal processing with near-neighbor-coupled time-varying quantum-dot arrays

TL;DR: In this paper, it was shown that Coulomb-coupled time-invariant artificial molecules behave like nonlinear locally passive devices, thus signal power gain or multiple equilibria cannot be achieved by integrating them.
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Synthesis of a Neutral Mixed‐Valence Diferrocenyl Carborane for Molecular Quantum‐Dot Cellular Automata Applications

TL;DR: A combination of UV/Vis-NIR spectroscopic and TD-DFT computational studies indicate that electron transfer within Fc(+) FcC2 B9 (-) is achieved through a bridge-mediated mechanism, providing the possibility of an all-neutral null state for the implementation of quantum-dot cellular automata (QCA) molecular computing.
Proceedings ArticleDOI

Quantum-dot cellular automata: an architecture for molecular computing

TL;DR: In this paper, the authors discuss the clocking of six-dot quantum automata (QCA) devices and connect layout to architecture, and discuss how to control the timing and direction of data flow in QCA circuits.
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Bistable saturation due to single electron charging in rings of tunnel junctions

TL;DR: In this paper, the behavior of rings of four small-capacitance tunnel junctions that are charged with two extra electrons is examined, where the interaction between cells results in strong bistable saturation in the cell's charge alignment which may be used to encode binary information.
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Disorder on GaAs(001) surfaces prepared by molecular beam epitaxy

TL;DR: In this article, the authors used reflection high energy electron diffraction (RHEED) to characterize the disorder on GaAs(001) surfaces during MBE even though these surfaces subsequently incorporate into exceedingly well-ordered bulk GaAs lattices.